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Product Detailed Parameters
- Description：JFET 2N-CH 60V 50MA 8SOIC
- Series：LS844
- Mfr：Linear Integrated Systems, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：60 V
- Drain to Source Voltage (Vdss)：60 V
- Current - Drain (Idss) @ Vds (Vgs=0)：1.5 mA @ 15 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：8pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：400 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The LS844 is a dual junction field-effect transistor (JFET) manufactured by Linear Integrated Systems, Inc. It is housed in an SOIC-8 surface-mount package and complies with RoHS standards. The device features a single configuration type within the dual package. Key electrical parameters include a drain-source breakdown voltage of 60 V and a gate-source breakdown voltage of -35 V. The gate-source cutoff voltage is specified at -4.5 V. At zero gate-source voltage, the drain current ranges from 2 mA to 9 mA. The continuous drain current is rated at 20 mA, with a maximum power dissipation of 500 mW.
Feature Summary
- Dual JFET configuration providing two independent switching or amplification channels in a compact surface-mount package.
Applications
- Analog signal switching circuits
- Low-noise preamplifier stages
- Voltage-controlled resistor applications
Procurement Notes
Verify the specific suffix codes on the component marking against the manufacturer's official datasheet to confirm pinout orientation and electrical tolerances. Ensure the ordering part number matches the required package style and compliance certifications. Cross-reference the date code and lot traceability if required for quality assurance protocols. Confirm that the supplier provides original manufacturer documentation rather than generic descriptions.
Selection Notes
Select this component when a dual JFET topology is required for low-noise analog processing or high-impedance buffering. The SOIC-8 package facilitates automated surface-mount assembly. Consider the 60 V breakdown voltage and 20 mA current rating to ensure operation within safe limits. Evaluate the -4.5 V cutoff voltage for appropriate biasing requirements in the target circuit design.
Part Context
The LS844 belongs to the broader family of discrete semiconductor transistors offered by Linear Integrated Systems. It serves as a complementary solution to other JFET models like the LSK series, offering a dual-channel alternative for space-constrained designs. The component is part of the standard discrete transistor portfolio used in general-purpose electronic equipment.
Replacement Considerations
Consult official substitution guides for equivalent dual JFETs in SOIC-8 packages. Verify pin compatibility and electrical parameter overlaps before replacing the LS844 with alternative manufacturers' parts.
