LSK389ASOIC8LTB ROHS

$9.98

Description：JFET 2N-CH 40V 8SOIC
Series：LSK389

SKU:8049edcd6d3a Category: JFETs Brand: Linear Integrated Systems, Inc.

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Product introduction

Product Detailed Parameters

Description：JFET 2N-CH 40V 8SOIC
Series：LSK389
Mfr：Linear Integrated Systems, Inc.
Package：Tube
FET Type：2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS)：40 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：2.6 mA @ 10 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：300 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds：25pF @ 10V
Resistance - RDS(On)：-
Power - Max：400 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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LSK389ASOIC8LTB ROHS

Overview

The LSK389ASOIC8LTB ROHS is an ultra-low noise monolithic dual N-channel JFET amplifier from Linear Integrated Systems. It features a typical voltage noise of 1.6 nV/√Hz at 1 kHz and 3.2 nV/√Hz at 10 Hz. The device offers four IDSS grades, with the 'A' grade ranging from 2.6 to 6.5 mA. Key electrical parameters include a maximum gate-to-source breakdown voltage of 40 V, a typical transconductance of 20 mS, and a typical input capacitance of 25 pF. The component utilizes a SOIC-8L surface-mount package.

Feature Summary

Ultra-low noise performance with guaranteed elimination of burst (RTN or popcorn) noise through 100% testing.
Monolithic dual construction providing tight matching between JFETs for superior thermal tracking.
High signal-to-noise ratio resulting from low and tightly matched gate threshold voltages.
Wide output swing capability designed to maximize performance in battery-operated applications.

Applications

Audio amplifiers and preamps
Discrete low-noise operational amplifiers
Battery-operated audio preamps
Acoustic sensors and sonic imaging
Hydrophones and sonobuoys

Procurement Notes

Verify the specific IDSS grade suffix matches the required current range, as the base part number covers multiple grades. Confirm the SOIC-8L package type and RoHS compliance status align with design requirements. Ensure the ordering code corresponds to the correct manufacturer revision and packaging format specified by Linear Integrated Systems.

Selection Notes

Select the LSK389A grade for lower saturation drain current applications requiring 2.6 to 6.5 mA. Consider the monolithic dual structure for circuits demanding precise matching without manual selection. Evaluate the 40 V breakdown voltage for headroom needs in high transient content amplifiers compared to single JFET alternatives.

Part Context

The LSK389 series serves as an improved second-source replacement for the Toshiba 2SK389. It is positioned as the industry's lowest noise dual N-channel JFET, offering better performance than individual discrete components. The LSK170 is the equivalent single N-channel version within the same product family.

Replacement Considerations

The LSK389 is documented as an improved second-source replacement for the Toshiba 2SK389. Designers should verify pinout compatibility and electrical parameter overlaps when substituting these components in existing designs.