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Product Detailed Parameters
- Description：JFET 2N-CH 40V 8SOIC
- Series：LSK389
- Mfr：Linear Integrated Systems, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：17 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：300 mV @ 0.1 µA
- Input Capacitance (Ciss) (Max) @ Vds：25pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：400 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The LSK389D is an ultra-low noise monolithic dual N-channel JFET amplifier from Linear Integrated Systems. It features a saturation drain current (IDSS) range of 17 to 30 mA, with a maximum gate-to-source cutoff voltage differential of 15 mV and typical forward transconductance of 20 mS. The device exhibits a typical input voltage noise density of 1.6 nV/√Hz at 1 kHz and 3.2 nV/√Hz at 10 Hz. It offers a high breakdown voltage of 40 V and low input capacitance of 25 pF. Packaged in SOIC 8L RoHS, it provides tight matching for improved thermal tracking.
Feature Summary
- Monolithic dual construction ensures excellent matching and thermal tracking between the two JFETs on a single silicon piece.
- Guaranteed elimination of burst or popcorn noise through 100% testing against strict specifications.
- Ultra-low noise performance with minimal input noise to capacitance product.
- High signal-to-noise ratio resulting from tightly matched and low gate threshold voltages.
Applications
- Audio amplifiers and preamps
- Discrete low-noise operational amplifiers
- Battery-operated audio preamps
- Acoustic sensors and sonic imaging
- Hydrophones and sonobuoys
Procurement Notes
Verify that the component matches the specific LSK389D grade, which corresponds to the 17-30 mA IDSS range. Confirm the package type is SOIC 8L and check for RoHS compliance markings. Ensure the supplier provides documentation confirming the absence of burst noise, as this is a critical specification for this series. Cross-reference the part number with official Linear Integrated Systems documentation to avoid counterfeit components.
Selection Notes
Select the LSK389D when a higher saturation drain current is required compared to the A, B, or C grades. This grade is suitable for applications needing up to 30 mA of IDSS while maintaining the series' ultra-low noise characteristics. Consider the SOIC 8L package for surface mount designs requiring compact footprints. Evaluate the 40 V breakdown voltage for headroom requirements in high transient program content amplifiers.
Part Context
The LSK389 series represents industry-leading ultra-low noise JFETs designed for high-performance analog circuits. Unlike discrete matched pairs, the monolithic design offers superior matching and thermal tracking. The D grade specifically targets applications requiring higher current drive capabilities within the low-noise spectrum. It serves as a direct replacement for legacy parts like the 2SK389 in modern designs.
Replacement Considerations
The datasheet identifies the LSK389 as an improved second source replacement for the 2SK389. Designers should verify pin compatibility and electrical parameter overlaps before substitution. No other equivalent single-channel or dual-channel replacements are explicitly listed for the LSK389D in the provided documentation.
FAQ
Does the LSK389 exhibit popcorn noise?
No, the LSK389 is 100% tested to guarantee the elimination of burst or popcorn noise entirely.
What is the typical noise voltage at 10 Hz?
The typical noise voltage at 10 Hz is 3.2 nV/√Hz.
How does the monolithic design benefit circuit performance?
The monolithic dual construction provides tighter IDSS matching and better thermal tracking compared to using individual discrete JFETs.
