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Product Detailed Parameters
- Description:SMT MMIC, MEDIUM POWER, LINEAR,
- Series:-
- Mfr:Mini-Circuits
- Package:Tape & Reel (TR)
- Frequency:6GHz ~ 18GHz
- P1dB:20.3dBm
- Gain:16.9dB
- Noise Figure:5.7dB
- RF Type:5G, Radar
- Voltage - Supply:6V
- Current - Supply:123mA
- Test Frequency:6GHz ~ 9GHz
- Mounting Type:Surface Mount
- Package / Case:24-VFQFN Exposed Pad
- Supplier Device Package:24-QFN (4x4)
- Grade:-
- Qualification:-
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Overview
The LVA-6183PN+ is a low phase noise distributed amplifier MMIC operating from 6 to 18 GHz. Fabricated on a GaAs HBT process, it features a 24-QFN (4x4 mm) package. The device provides medium power linear amplification with a 50Ω interface. It is designed for ultra-low phase noise performance in wideband applications.
Feature Summary
- Ultra-low phase noise distributed amplifier design
- GaAs HBT fabrication process for high linearity
- Wideband operation covering 6 to 18 GHz
Applications
- Low noise signal sources
- Radar systems
- 5G infrastructure components
Procurement Notes
Verify the specific suffix PN+ against official Mini-Circuits documentation to confirm the exact pinout and package configuration. Ensure compatibility with 50Ω system impedance requirements. Cross-reference the datasheet revision date to validate current electrical specifications before integration into final designs.
Selection Notes
Select this component when ultra-low phase noise is critical within the 6–18 GHz range. The GaAs HBT technology supports medium power linear amplification. Consider the 4x4 mm QFN footprint for space-constrained PCB layouts requiring SMT assembly.
Part Context
This model belongs to Mini-Circuits' wideband amplifier portfolio. It utilizes distributed amplifier topology to achieve consistent gain and noise characteristics across its broad frequency span. The HBT process ensures robust performance in demanding RF environments.
Replacement Considerations
Consult official Mini-Circuits substitution guides for verified equivalents. Generic replacements may not match the specific phase noise or GaAs HBT characteristics required for this application.
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