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LXP1002-23-4/TR is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 50V 250MW SOT-23-3. Review the specifications below when checking this part for your BOM.
The LXP1002-23-4/TR is a silicon PIN diode manufactured by Microchip Technology, housed in an SOT-23-3 surface-mount package. It features a series configuration with a maximum peak reverse voltage of 50V and a maximum forward current of 100 mA. The device dissipates up to 250 mW of power and operates within a temperature range of -55°C to 125°C. Electrical characteristics include a capacitance of 0.32 pF at 50V reverse bias and 1 MHz frequency, alongside a resistance of 4 ohms at 100 mA forward current and 100 MHz frequency.
Verify the specific suffix against official Microchip documentation to confirm packaging details. Distributor listings may indicate bulk or tape-and-reel variations. Ensure the component matches the required RoHS compliance status and moisture sensitivity level before procurement. Cross-reference the manufacturer part number with authorized channel data to avoid counterfeit risks.
Select this component when a small-form-factor RF switch is required with moderate power handling capabilities. The SOT-23-3 package suits space-constrained designs. Verify that the 50V reverse voltage and 100 mA forward current ratings exceed the circuit's operational peaks. Confirm that the specified capacitance and resistance values align with the target frequency response requirements.
This part belongs to the LXP1002 family of RF PIN diodes from Microchip Technology. The family offers various configurations and packages to suit different RF design needs. The LXP1002-23-4 variant specifically addresses applications requiring a compact, surface-mount solution with defined electrical parameters for signal routing and attenuation.
Consult the official LXP1000-LXP1011 datasheet for confirmed substitute part numbers. Evaluate alternatives based on matching pinout, package dimensions, and critical electrical parameters such as breakdown voltage and capacitance.
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