LXS201-23-2

RF Diode Overview

The LXS201-23-2 is a silicon Schottky diode manufactured by Microchip Technology, designed for surface-mount applications. It features a non-hermetic plastic package in the SOT-23-3 configuration. The device is configured as one pair of series-connected diodes, suitable for RF and microwave circuits. Key electrical parameters include a maximum peak reverse voltage of 3V and a maximum forward current of 1A. The component exhibits a reverse leakage current of 400nA at 1V and operates with a power dissipation rating of 250mW.

RF Diode Feature Summary

• Utilizes silicon Schottky technology for fast switching performance
• Non-hermetic plastic surface-mount construction
• Integrated dual-diode series connection topology

RF Diode Applications

• RF signal detection and mixing circuits
• Microwave frequency conversion stages
• Low-voltage rectification in portable electronics

RF Diode Procurement Notes

Verify the specific ordering suffix to ensure the correct package variant and tape-and-reel quantity match project requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to finalizing procurement plans. Ensure storage conditions align with the non-hermetic packaging specifications to maintain device integrity during assembly.

RF Diode Selection Notes

Select this component when a low-capacitance, high-speed Schottky solution is required for RF applications operating below 3V reverse bias. The series-pair configuration simplifies circuit design for balanced mixer or detector topologies. Evaluate thermal management needs against the 250mW dissipation limit and verify that the SOT-23-3 footprint fits within the available PCB area constraints.

RF Diode Part Context

This part belongs to Microchip's LSX series of RF Schottky diodes. These components are engineered for high-frequency performance where low junction capacitance and fast recovery times are critical. The series connects two diodes internally, providing a compact solution for differential or balanced RF circuit architectures without requiring discrete external pairing.

RF Diode Replacement Considerations

Consult official Microchip documentation for direct pin-compatible substitutes within the LSX family. Verify that any alternative component matches the 3V peak reverse voltage and 1A current ratings to ensure functional equivalence in existing designs.