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Product Detailed Parameters
- Description：BRIDGE RECT 3P 1.2KV 100A MODULE
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Type：Three Phase
- Technology：Standard
- Voltage - Peak Reverse (Max)：1.2 kV
- Current - Average Rectified (Io)：100 A
- Voltage - Forward (Vf) (Max) @ If：1.15 V @ 100 A
- Current - Reverse Leakage @ Vr：10 mA @ 1200 V
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
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FAQ
Is the M3P100A-120 a silicon or silicon carbide device?
The provided documentation identifies GeneSiC Semiconductor as a manufacturer of silicon power Schottky diodes, indicating this component is likely silicon-based.
What mounting style does the M3P100A-120 utilize?
GeneSiC semiconductor modules typically employ screw mount installation styles for thermal management and mechanical stability.
Does the M3P100A-120 feature an electrically isolated base plate?
Standard GeneSiC Schottky diode modules are designed with electrically isolated base plates to facilitate safe integration into power circuits.
