Diode Arrays MA3S132D0L product image

MA3S132D0L

  • Description:DIODE ARRAY GP 80V 100MA SSMINI3
  • Series:-

SKU:87aa7b7cc1e4 Category: Brand:

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MA3S132D0L is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is DIODE ARRAY GP 80V 100MA SSMINI3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MA3S132D0L

  • Description:DIODE ARRAY GP 80V 100MA SSMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):10 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 75 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:SC-89, SOT-490
  • Supplier Device Package:SSMini3-F2
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MA3S132D0L

MA3S132D0L

Diode Arrays Overview

The MA3S132D0L is a silicon epitaxial planar switching diode manufactured by Panasonic Electronic Components. It features a maximum reverse voltage of 80 V and an average forward current rating of 100 mA per diode. The device incorporates two isolated elements within a single SSMini3-F2 package, configured as a common anode array. Key electrical characteristics include a typical forward voltage of 1.2 V at 100 mA, a reverse leakage current of 100 nA at 75 V, and a short reverse recovery time of 10 ns.

Diode Arrays Feature Summary

  • Contains two electrically isolated diode elements within a single surface-mount package to facilitate high-density circuit mounting.
  • Engineered for switching applications with a specified short reverse recovery time and low terminal capacitance.

Diode Arrays Applications

  • General-purpose switching circuits
  • Office equipment internal logic
  • Communications equipment signal processing
  • Measuring instruments control interfaces

Diode Arrays Procurement Notes

Verify the specific suffix against official documentation, as ordering codes may indicate variations in packaging or tape specifications. Confirm component availability status directly with the manufacturer, as this part number is listed as discontinued. Ensure that any substitute components maintain identical pin configurations and absolute maximum ratings to guarantee system compatibility.

Diode Arrays Selection Notes

Select this component when designing circuits requiring compact dual-diode isolation in a small form factor. The low terminal capacitance makes it suitable for high-frequency signal paths where minimal parasitic effects are critical. Evaluate thermal management requirements based on the 150°C maximum junction temperature limit during operation.

Diode Arrays Part Context

This component belongs to the MA3S132 series of silicon epitaxial planar diodes designed specifically for general electronic equipment. The series includes variants such as the MA3S132E, which shares similar physical dimensions but differs in specific electrical parameters. These devices are intended for standard applications including household appliances and consumer electronics.

Diode Arrays Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify that alternative components match the SC-89/SOT-490 package outline and provide equivalent 80 V reverse voltage and 100 mA forward current capabilities.

Diode Arrays FAQ

What is the internal configuration of the MA3S132D0L?

The device contains two isolated diode elements arranged in a common anode configuration within a single SSMini3-F2 package.

How does the terminal capacitance affect performance?

The device exhibits a low terminal capacitance of 15 pF at 0 V and 1 MHz, supporting its suitability for high-speed switching applications.

What is the maximum non-repetitive peak forward surge current?

The absolute maximum rating for non-repetitive peak forward surge current is 500 mA for a single element under specified pulse width conditions.

MA3S132D0LMA3S132D0L

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