MA4AGP907

RF Diode Overview

The MA4AGP907 is an Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diode fabricated on OMCVD epitaxial wafers. It features a low RC product of 0.1ps and a switching speed of 2-3ns. The device operates within a temperature range of -55°C to +125°C with a junction temperature limit of +175°C. Electrical specifications include a maximum reverse voltage of -50V, total capacitance of 0.030pF at -5V/1MHz, series resistance of 7.0Ω at +10mA/1MHz, and forward voltage of 1.45V at +10mA. Dissipated power is rated at 50mW, with a CW incident power handling of +23dBm.

RF Diode Feature Summary

• Ultra-low capacitance enables operation through millimeter frequencies for RF switches and phase shifters.
• Silicon nitride passivation combined with a polyimide scratch protection layer safeguards the junction and anode air-bridge.
• Compatible with buffered TTL drivers for simplified circuit integration.

RF Diode Applications

• RF switches operating at millimeter wave frequencies
• Switched phase shifter applications
• Microwave multi-throw switch assemblies

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number and datasheet revision against official MACOM documentation. Confirm that the specific package variant matches the required assembly method, such as gel pack or pocket tape, prior to procurement. Ensure all handling procedures strictly adhere to ESD sensitivity guidelines specified in the installation section.

RF Diode Selection Notes

Select this component when single-digit nanosecond switching speeds are required for pulsed or continuous wave applications. The ultra-low capacitance makes it suitable for designs where series capacitance adversely loads inputs and affects VSWR in multi-throw configurations. Verify that the -50V reverse voltage rating meets the system's electrical requirements.

RF Diode Part Context

This device belongs to the AlGaAs flip-chip PIN diode family from MACOM Technology Solutions. It shares fabrication processes with the MA4AGFCP910 but differs in reverse voltage ratings and packaging options. The product line utilizes OMCVD epitaxial wafers designed for high uniformity and extremely low parasitics.

RF Diode Replacement Considerations

The MA4AGSBP907 is a solder bumped version of the MA4AGP907. The MA4AGFCP910 is a related device with different reverse voltage characteristics (-75V). Verify compatibility regarding mounting techniques and electrical limits before substitution.