MA4E2040

RF Diode Overview

The MA4E2040 is a gallium arsenide beam lead Schottky barrier diode configured as a series tee. It features silicon nitride passivation and a protective polymer coating for scratch resistance. The device operates within a temperature range of -65°C to +125°C. Electrical specifications at +25°C include a typical junction capacitance of 0.020 pF, total capacitance of 0.045 pF, and series resistance of 4.0 Ω. Reverse voltage breakdown is typically 7.0 V at -10 µA.

RF Diode Feature Summary

• Utilizes high carrier mobility gallium arsenide material to achieve lower series resistance compared to silicon equivalents with similar capacitance.
• Features silicon nitride passivation combined with an additional polymer layer to protect the junction and anode air bridge from physical damage.
• Designed with extremely low parasitics to support operation through millimeter wave frequencies.

RF Diode Applications

• Single and double balanced mixers in PCN transceivers and radios
• Automotive radar systems
• Police radar detectors

RF Diode Procurement Notes

Verify the specific package configuration against the official datasheet before ordering. Confirm that handling procedures meet electrostatic discharge requirements for HBM Class 0 devices. Ensure mounting techniques align with recommended methods such as thermo-compression bonding or parallel-gap welding.

RF Diode Selection Notes

Select this component when low noise figure and conversion loss are critical due to the high carrier mobility of the gallium arsenide substrate. Consider the series tee configuration for applications requiring specific impedance matching or circuit topology integration. Verify that the operating frequency range aligns with the high cut-off frequency capabilities of the device.

RF Diode Part Context

This part belongs to the MA4E20xx Series of GaAs beam lead Schottky diodes. The series includes single diodes like the MA4E2037 and anti-parallel pairs like the MA4E2039. All variants share similar fabrication processes on OMCVD epitaxial wafers designed for high device uniformity.

RF Diode Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Evaluate alternative components based on matching gallium arsenide technology, beam lead packaging, and equivalent electrical parameters such as total capacitance and series resistance.

RF Diode FAQ

What is the maximum incident power rating for the MA4E2040?

The absolute maximum rating for incident power (LO & RF) is 20 dBm.

How should the MA4E2040 be handled to prevent damage?

Proper ESD control techniques must be used as it is an HBM Class 0 device. A vacuum pencil with a #27 tip is recommended for picking and placing to avoid distorting or breaking the beam leads.

What is the typical reverse voltage breakdown for the MA4E2040?

The typical reverse voltage breakdown is 7.0 V, measured at -10 µA.