MA4E2200A1-1141T

RF Diode Overview

The MA4E2200A1-1141T is a single Schottky diode manufactured by MACOM Technology Solutions, housed in an SOD-323-2 surface-mount package. It utilizes silicon technology and is designed for low-voltage applications with a maximum repetitive reverse voltage of 1.5 V and a forward current rating of 1 mA. The device exhibits a typical forward voltage of 220 mV. It operates within a temperature range from -65 °C to +125 °C. The component is RoHS compliant and lead-free, suitable for automated surface-mount assembly processes.

RF Diode Feature Summary

• Low forward voltage drop for efficient rectification
• Lead-free plastic construction for environmental compliance
• Compact SMD/SMT footprint for space-constrained designs

RF Diode Applications

• Low-voltage signal detection circuits
• RF mixer applications requiring low barrier potential
• Power supply rectification in portable devices

RF Diode Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes upon receipt to ensure authenticity. Confirm that the received components match the SOD-323-2 package dimensions and marking requirements specified in the official datasheet. Check for physical damage or contamination before integration into the production line.

RF Diode Selection Notes

Select this component when a low forward voltage and high-speed switching capability are required in a small surface-mount package. Ensure the circuit design does not exceed the 1.5 V peak reverse voltage limit. Consider the thermal management requirements given the 200 mW power dissipation capability and the operating temperature range limits.

RF Diode Part Context

This part belongs to MACOM's portfolio of Schottky diodes and rectifiers. It is distinct from PIN diodes or varactor diodes offered by the same manufacturer. The product is categorized under discrete semiconductor diodes and is intended for general-purpose or RF applications where low capacitance and fast recovery are beneficial.