MA4E2502H-1246

RF Diode Overview

The MA4E2502H-1246 is a high barrier silicon Schottky diode from the SURMOUNT series, fabricated using the Heterolithic Microwave Integrated Circuit (HMIC) process. It features extremely low parasitic capacitance and inductance, with a maximum forward voltage of 700 mV at 1 mA and a breakdown voltage of at least 3 V at 10 µA. The device has a typical junction capacitance of 0.10 pF at 0 V and a slope resistance of 11 Ω typical. Absolute maximum ratings include a reverse voltage of 5 V, RF C.W. incident power of 20 dBm, and an operating temperature range of -40°C to +125°C.

RF Diode Feature Summary

• Utilizes patented HMIC construction combining silicon pedestals and glass dielectric for excellent loss and power dissipation characteristics.
• Features rugged surface mountable design with polyimide scratch protection, eliminating the need for wirebonds.
• Includes multilayer metallization with a platinum diffusion barrier, allowing for a 16-hour stabilization bake at 300°C.
• Demonstrates lower susceptibility to electrostatic discharge damage compared to conventional beam lead Schottky diodes.

RF Diode Applications

• Microwave mixers
• Sub-harmonic mixers
• Detectors
• Limiters

RF Diode Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number MA4E2502x-1246 requires replacing 'x' with 'H' to specify the high barrier variant. Packaging options include individual dies in carriers or reels. Confirm the required quantity format matches the available supply configurations provided by the manufacturer.

RF Diode Selection Notes

Select this component for applications requiring low parasitics in microwave circuits up to Ku band frequencies. The high barrier type is suitable for higher voltage requirements compared to low or medium barrier variants. Ensure the circuit design accommodates the 5 V reverse voltage limit and 20 dBm RF power handling capability.

RF Diode Part Context

This device belongs to the MA4E2502 Series, which includes low, medium, and high barrier Schottky diodes. The series is designed to replace fragile beam lead diodes with a more robust surface mount alternative. The HMIC technology allows for direct soldering to hard or soft substrates, providing a reliable and repeatable solution for microwave integrated circuits.

RF Diode Replacement Considerations

The datasheet indicates that the Surmount diodes can directly replace corresponding fragile beam lead diodes. Specific equivalent beam lead part numbers are not listed in the provided documentation.

RF Diode FAQ

What is the recommended frequency range for the MA4E2502H-1246?

The device is recommended for use in microwave circuits through Ku band frequencies, with electrical specifications defined for DC to 18 GHz.

How is the MA4E2502H-1246 mounted to a circuit board?

It is surface mountable and can be attached to hard substrates using standard solder attachment techniques or to soft substrates using solder paste reflow. Conductive silver epoxy is not recommended.

What is the maximum reverse voltage rating?

The absolute maximum reverse voltage rating is 5 V.