MA4E2514L-1116

RF Diode Overview

The MA4E2514L-1116 is a GaAs Schottky barrier diode manufactured by MACOM Technology Solutions. It utilizes flip-chip technology and features a Reverse Tee configuration, designed for high-frequency signal processing applications. The component operates within a temperature range of -65°C to +125°C. Key electrical specifications include a maximum repetitive peak reverse voltage (Vrrm) of 7 V and a forward voltage (Vf) of approximately 700 mV at a forward current (If) of 1 mA. The device exhibits a low reverse leakage current (Ir) of 10 µA, ensuring efficient rectification and signal detection in microwave circuits.

RF Diode Feature Summary

• Utilizes Gallium Arsenide (GaAs) material for high-frequency performance
• Flip-chip construction for compact surface-mount integration
• Reverse Tee configuration for optimized circuit layout

RF Diode Applications

• Microwave signal detection and mixing
• High-frequency rectification circuits
• RF front-end modules

RF Diode Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity requirements directly with the manufacturer or authorized distributors before placing orders. Confirm that the die-level packaging aligns with your pick-and-place equipment capabilities. Ensure compliance with RoHS directives if applicable to your supply chain standards.

RF Diode Selection Notes

Select this component when a low-capacitance, high-speed Schottky diode is required for frequencies extending into the microwave range. The GaAs substrate offers superior high-frequency characteristics compared to silicon alternatives. Consider the Reverse Tee footprint during PCB layout to ensure proper thermal dissipation and electrical connectivity.

RF Diode Part Context

This part belongs to MACOM's portfolio of GaAs Schottky diodes, which are engineered for high cutoff frequencies. These components are typically used in RF and microwave systems where fast switching speeds and low forward voltage drops are critical for maintaining signal integrity and system efficiency.

RF Diode Replacement Considerations

Consult MACOM technical support for verified cross-reference data. Alternative GaAs flip-chip Schottky diodes from other manufacturers may require significant redesign of the RF matching network due to differences in parasitic capacitance and package inductance.