MA4E2532M-1113

$6.97

Description：RF DIODE SCHOTTKY 5V 50MW DIE
Series：MA4E2532 Surmount™

SKU:7c11da31a86e Category: RF Diodes Brand: MACOM Technology Solutions

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Product introduction

MA4E2532M-1113 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 5V 50MW DIE. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MA4E2532M-1113

Description：RF DIODE SCHOTTKY 5V 50MW DIE
Series：MA4E2532 Surmount™
Mfr：MACOM Technology Solutions
Package：Tray
Diode Type：Schottky - 2 Pair Series
Voltage - Peak Reverse (Max)：5V
Current - Max：20 mA
Capacitance @ Vr, F：0.18pF @ 0V, 1MHz
Resistance @ If, F：18Ohm @ 10.5mA, 1MHz
Power Dissipation (Max)：50 mW
Operating Temperature：175°C (TJ)
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

RF Diode datasheet and documents for MA4E2532M-1113

MA4E2532M-1113

RF Diode Overview

The MA4E2532M-1113 is a silicon Schottky diode from the MA4E2532 Surmount series, configured as a ring quad with two pairs in series. It features a peak reverse voltage of 5V and a maximum forward current of 20 mA. The device exhibits a typical forward voltage of 0.47V and a total capacitance of 0.16 pF. Fabricated using patented Heterolithic Microwave Integrated Circuit technology, it is designed for low and medium barrier applications.

RF Diode Feature Summary

Utilizes patented Heterolithic Microwave Integrated Circuit (HMIC) fabrication technology
Configured as a ring quad diode structure with two pairs in series
Optimized for low and medium barrier RF applications

RF Diode Applications

RF mixer circuits
Detector applications
Frequency multiplier stages

RF Diode Procurement Notes

Verify the specific datasheet revision and electrical test conditions prior to procurement. Confirm that the package configuration matches the intended PCB layout requirements. Ensure that the operating temperature range aligns with the system environment specifications. Cross-reference the part number suffixes to confirm exact material and processing variants.

RF Diode Selection Notes

Select this component for high-frequency applications requiring low parasitic capacitance and precise barrier height control. The HMIC process offers superior consistency compared to discrete implementations. Evaluate the 5V reverse voltage rating against peak signal levels. Consider the 20 mA current limit for power handling requirements in mixer or detector topologies.

RF Diode Part Context

This part belongs to the MA4E2532 Surmount series, which utilizes MACOM's proprietary HMIC technology. The series is characterized by high reliability and performance in microwave frequencies. The ring quad configuration allows for balanced circuit designs, reducing even-order harmonics and improving isolation in RF systems.