MA4L022-134

RF Diode Overview

The MA4L022-134 is a silicon PIN limiter diode from the MA4L series, supplied as an unencapsulated chip (ODS-134 package). It features gold doping to achieve a carrier lifetime of 10 ns and an I-region thickness of 2 mils. Key electrical parameters include a breakdown voltage of 20/35 V, junction capacitance of 0.12 pF at -10 V reverse bias, and series resistance of 2.00 Ohms at 500 MHz. The device provides low insertion loss and fast signal recovery for high-power applications.

RF Diode Feature Summary

• Gold-doped silicon construction for rapid carrier recombination and fast signal response times
• Optimized for low flat leakage power and minimal insertion loss in passive limiter circuits
• Silicon nitride passivation layer ensures proven reliability and mechanical ruggedness

RF Diode Applications

• Passive limiter control circuits for receiver protection
• Protection of sensitive components such as low noise amplifiers (LNAs)
• Shielding detectors and mixers within RF front-end architectures

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's current case style table to confirm the intended package configuration. Ensure that handling procedures strictly follow the provided guidelines for semiconductor chips to prevent damage from particulates or electrostatic discharge during assembly.

RF Diode Selection Notes

Select this component when a fast recovery time is required due to its gold-doped characteristics. Compare the 2.00 Ohm series resistance and 0.12 pF junction capacitance against circuit requirements. Verify that the 20/35 V breakdown voltage meets the peak power handling needs of the specific application environment.

RF Diode Part Context

This part belongs to the MA4L, MADL, and MADP series of silicon PIN limiter diodes manufactured by MACOM Technology Solutions. These devices are engineered with small to medium I-region lengths specifically designed for high-signal applications requiring robust protection capabilities across wide frequency ranges.

RF Diode Replacement Considerations

Direct substitutes within the same series include MA4L021-134 and MA4L031-134. Evaluate these alternatives based on their respective breakdown voltages, junction capacitances, and carrier lifetimes to ensure compatibility with the existing circuit design constraints.