MA4L022-186

RF Diode Overview

The MA4L022-186 is a silicon PIN limiter diode from the MA4L series, packaged in the 186 ceramic surface mount style. It features a breakdown voltage of 20 to 35 V and a junction capacitance of 0.17 pF at 0 V reverse bias. The device exhibits a series resistance of 0.19 Ω at 500 MHz and a carrier lifetime of 10 ns. Nominal high signal performance at 9.4 GHz includes a recovery time of 31 ns, an incident peak power limit of 41 dBm for 10 dB limiting, and a CW input power rating of 3 dBm.

RF Diode Feature Summary

• Designed for passive limiter control circuits to protect sensitive receiver components such as LNAs, detectors, and mixers.
• Utilizes gold doping to achieve lower carrier recovery times suitable for high signal applications.
• Provides low insertion loss and flat leakage power with fast signal response characteristics.

RF Diode Applications

• Passive limiter control circuits
• Protection of low noise amplifiers (LNAs)
• Receiver protection for detectors and mixers

RF Diode Procurement Notes

Verify the specific package suffix against the manufacturer's current case style availability table. Confirm that the ordering base part number matches the required electrical specifications for the target frequency range. Ensure compliance with RoHS standards and verify handling requirements for the ceramic surface mount configuration during assembly.

RF Diode Selection Notes

Select this component when a fast recovery time is prioritized over ultra-low flat leakage power. The gold-doped construction offers a 10 ns carrier lifetime, which is faster than non-gold doped alternatives but results in higher leakage. Evaluate the 186 package parasitics against the circuit impedance requirements.

RF Diode Part Context

This component belongs to the MA4L, MADL, and MADP series of silicon PIN limiter diodes. These devices are engineered with small to medium I-region lengths to handle high signal levels while maintaining low insertion loss at zero bias. The series supports frequencies up to 18 GHz and is available in discrete die or various assembled packages.

RF Diode Replacement Considerations

MA4L021-186

RF Diode FAQ

What is the difference between the MA4L022 and MA4L021?

Both devices share similar electrical parameters, but the MA4L022 has a slightly higher typical junction capacitance (0.17 pF vs 0.16 pF) and lower series resistance (0.19 Ω vs 0.20 Ω) compared to the MA4L021.

How does gold doping affect the MA4L022-186?

Gold doping reduces the carrier lifetime to 10 ns, providing faster signal recovery times. This comes at the cost of higher flat leakage power compared to non-gold doped variants.