MA4L031-134

RF Diode Overview

The MA4L031-134 is a gold-doped silicon PIN limiter diode die in the ODS-134 chip package. It features a breakdown voltage of 30V to 50V, typical junction capacitance of 0.20 pF at 0V reverse bias, and maximum series resistance of 2.00 Ohms at 500 MHz. The device has a carrier lifetime of 20 ns, an I-region thickness of 3 mils (1.4 µm), and a contact diameter of 1.2 mils. CW thermal resistance is 34°C/W. Nominal high signal performance at 9.4 GHz includes a recovery time of 33 ns, 1 dB limiting input power of 43 dBm, and 10 dB limiting input power of 125 Watts.

RF Diode Feature Summary

• Gold-doped silicon construction for fast signal response and recovery times
• Designed for low insertion loss and low flat leakage power at zero bias
• Silicon nitride passivation for proven reliability

RF Diode Applications

• Passive limiter control circuits
• Protection of sensitive receiver components such as LNAs, detectors, and mixers
• High signal applications covering the 10 MHz to 18 GHz frequency range

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's current Part Numbering and Ordering Information table. Confirm that the base part number matches the required electrical characteristics, specifically the gold-doped variant with the specified breakdown voltage and capacitance values. Ensure the selected package style aligns with the intended assembly method and circuit design requirements.

RF Diode Selection Notes

Select this component when a fast recovery time is prioritized over ultra-low flat leakage power. The gold-doped structure provides a 20 ns carrier lifetime suitable for high peak power limiting. Compare the 2.00 Ohm series resistance and 0.20 pF capacitance against circuit impedance matching requirements. Verify that the 34°C/W thermal resistance meets the system's heat dissipation capabilities.

RF Diode Part Context

This device belongs to the MA4L, MADL, and MADP Series of silicon PIN limiter diodes. These devices utilize small and medium I-region lengths optimized for high signal applications. The series offers various P1dB compression powers and is available in discrete die or assembled packages. The MA4L031-134 represents the base chip configuration within this family.

RF Diode Replacement Considerations

MA4L032-134: Features a slightly higher series resistance (2.50 Ohms) and lower carrier lifetime (15 ns).

RF Diode FAQ

What is the difference between the gold-doped and non-gold doped versions in this series?

Gold-doped devices, like the MA4L031-134, are designed for lower recovery times. Non-gold doped devices are engineered for lower flat leakage power.

How is the series resistance defined for this component?

Maximum series resistance is measured at 500 MHz and represents the total diode resistance, including both the chip junction resistance and package ohmic resistance.

What is the recommended mounting temperature limit?

The absolute maximum mounting temperature is +320°C for a duration of 10 seconds.