MA4L031-186

RF Diode Overview

The MA4L031-186 is a silicon PIN limiter diode from the MA4L series, packaged in the ODS-186 ceramic surface mount style. It features gold-doped die with a breakdown voltage of 30 V to 50 V and a typical junction capacitance of 0.20 pF at 0 V reverse bias. The device exhibits a maximum series resistance of 2.00 Ohms at 500 MHz and a carrier lifetime of 20 ns. Nominal high signal performance at 9.4 GHz includes a recovery time of 33 ns, a 1 dB limiting input power of 10 dBm, and a 10 dB limiting input power of 43 dBm.

RF Diode Feature Summary

• Gold-doped silicon construction for optimized fast signal response and recovery times
• Low insertion loss and low flat leakage power characteristics at zero bias
• Silicon nitride passivation for proven reliability under high signal conditions

RF Diode Applications

• Passive limiter control circuits for receiver protection
• Protection of sensitive components such as LNAs, detectors, and mixers
• High signal applications across the 10 MHz to 18 GHz frequency range

RF Diode Procurement Notes

Verify the specific package suffix against the manufacturer's current Available Case Style table before ordering. Confirm that the required electrical parameters align with the Gold Doped Die specifications provided in the datasheet. Ensure handling procedures for semiconductor chips are followed to prevent damage or contamination during assembly.

RF Diode Selection Notes

Select this component when fast recovery time is prioritized over ultra-low leakage, as indicated by the gold doping. Compare the 30-50 V breakdown voltage and 20 ns carrier lifetime against system requirements. Verify compatibility with the ODS-186 package parasitics, specifically the 0.15 pF package capacitance and 0.7 nH inductance.

RF Diode Part Context

This part belongs to the MA4L, MADL, and MADP series of silicon PIN limiter diodes designed for high signal applications. The series offers various I-region lengths and doping options to balance recovery speed and leakage power. The MA4L031 variant specifically provides medium I-region length characteristics suitable for general-purpose limiting tasks.

RF Diode Replacement Considerations

MA4L031-134 (Chip)

RF Diode FAQ

What is the difference between the gold-doped and non-gold-doped versions of the MA4L031?

Gold-doped devices, like the MA4L031, are designed for lower recovery times, whereas non-gold doped devices are intended for lower flat leakage power.

How is the series resistance defined for this component?

The maximum series resistance (RS) is measured at 500 MHz and represents the total diode resistance, including both chip junction resistance and package ohmic resistance.

What is the recommended mounting temperature limit?

The absolute maximum mounting temperature is +320°C for a duration of 10 seconds.