RF Diode MA4P4001B-402 product image

MA4P4001B-402

$32.85
  • Description:RF DIODE PIN 100V 2.5W AXIAL
  • Series:-

SKU:e980d76ae95b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MA4P4001B-402 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE PIN 100V 2.5W AXIAL. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MA4P4001B-402

  • Description:RF DIODE PIN 100V 2.5W AXIAL
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):100V
  • Current - Max:-
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:500mOhm @ 100mA, 100MHz
  • Power Dissipation (Max):2.5 W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Package / Case:Axial
  • Supplier Device Package:Axial
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MA4P4001B-402

MA4P4001B-402

RF Diode Overview

The MA4P4001B-402 is a high-power PIN diode from the MACOM HIPAX series, designed for switch and attenuator applications. It features an axial leaded package (Case Style 402) with full face chip bonding to metal pins. Key electrical specifications include a maximum reverse voltage of 100 VDC, a typical total capacitance of 2.2 pF, and a maximum series resistance of 0.5 Ω at 100 mA forward current. The device has a minimum carrier lifetime of 20 µs and supports a continuous wave power dissipation of 12 W with a thermal resistance of 12.5 °C/W.

RF Diode Feature Summary

  • High power handling capability suitable for kilowatt-level CW applications
  • Low loss and low distortion performance due to thick I-region and long carrier lifetime
  • Fully passivated chip construction ensuring extremely low reverse bias leakage current
  • Low thermal resistance achieved through symmetrical full-face chip bonding

RF Diode Applications

  • Low distortion RF attenuators
  • Surface mount switches
  • Cellular radio antenna switches

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package style and quantity options. The base part number indicates an axial leaded HIPAX package. Confirm RoHS compliance status and any available military screening requirements such as MIL-STD-750 testing if required for the intended deployment environment.

RF Diode Selection Notes

Select this component for designs requiring robust power handling in HF through UHF frequency ranges. The 100 V reverse voltage rating and 0.5 Ω series resistance make it suitable for moderate power switching tasks. Ensure the application operates within the specified junction temperature range of -55°C to +175°C and respects the absolute maximum ratings to prevent permanent damage.

RF Diode Part Context

This device belongs to the MACOM MA4P MELF & HIPAX series of high-power PIN diodes. The series utilizes silicon technology with a thick intrinsic region and long carrier lifetime to maintain low series resistance and capacitance. The HIPAX variant specifically refers to the rugged ceramic axial leaded packaging designed for high reliability in demanding environments.

RF Diode Replacement Considerations

Consult the manufacturer's datasheet for direct cross-references within the MA4P family. Alternative packages such as MELF (e.g., MA4P4001F-1091T) offer surface mount options with similar electrical characteristics but different thermal and mechanical properties.

MA4P4001B-402MA4P4001B-402
$32.85
Buy Now