MA4P4002B-402

RF Diode Overview

The MA4P4002B-402 is a high-power PIN diode from the MACOM MELF and HIPAX series, designed for switch and attenuator applications requiring high power handling and low distortion. It features a fully passivated silicon chip with a thick I-region and long carrier lifetime, maintaining low series resistance and capacitance values. The device is enclosed in a rugged ceramic axial leaded package (Case Style 402) with full face bonding to metal pins on both anode and cathode, ensuring low thermal resistance due to symmetrical thermal paths. Rated for a maximum DC reverse voltage of 200 VDC, it operates within a junction temperature range of -55°C to +175°C.

RF Diode Feature Summary

• High power handling capability suitable for CW power levels above 1 kW
• Low loss and low distortion performance for precision RF applications
• Fully passivated chip design resulting in extremely low reverse bias leakage current
• Low thermal resistance achieved through full face chip bonding to metal pins

RF Diode Applications

• Switch and attenuator applications from HF through UHF frequencies
• Low distortion attenuators
• Surface mount switches
• Cellular radio antenna switches

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package style and reel quantity requirements. The 'B' designation indicates an axial leaded HIPAX package, while the '402' suffix specifies the bulk packaging format containing 100 pieces per bag. Confirm RoHS compliance status and any available MIL-STD-750 screening options directly with the supplier or manufacturer before placing orders.

RF Diode Selection Notes

Select this component when designing circuits that require robust high-power handling in the HF to UHF bands. The axial leaded HIPAX package provides mechanical stability and ease of assembly for prototypes or low-volume production. Ensure the application's peak reverse voltage remains below the 200 VDC rating and consider the thermal management requirements given the specified thermal resistance characteristics under various heatsink conditions.

RF Diode Part Context

This part belongs to the MA4P4000 series within the broader MACOM MELF and HIPAX product line. It shares common semiconductor technology and packaging standards with related parts like the MA4P4001B-402 and MA4P4302B-402. The series is characterized by its use of float-zone silicon material and proprietary epitaxial processes to achieve high breakdown voltages and long carrier lifetimes.

RF Diode Replacement Considerations

Direct substitutes within the same voltage class include the MA4P4001B-402 (100V rating) if lower voltage suffices, or other MA4P4000 series variants with matching 200V ratings such as MA4P4002F-1091T for surface mount needs. Verify electrical parameters like series resistance and capacitance against the new part's datasheet to ensure circuit compatibility.