MA4P506-131

RF Diode Overview

The MA4P506-131 is a silicon PIN diode chip manufactured by MACOM Technology Solutions. It features a Cermachip construction with hard glass passivation, providing a hermetically sealed design suitable for high-reliability applications. The device operates within a temperature range of -55°C to +175°C and supports junction temperatures up to +175°C. Key electrical specifications include a reverse voltage rating of 500 V, a maximum capacitance of 0.70 pF at -100 V, and a series resistance of 0.30 Ω at 10 mA. The chip has an I-region length of 50 µm and a thermal resistance (Theta) of 11 °C/W.

RF Diode Feature Summary

• Hermetically sealed Cermachip design utilizing hard glass passivation technology
• Optimized for low distortion attenuator and switch circuits due to thicker I-regions
• Capable of controlling kilowatts of RF power in control circuit applications

RF Diode Applications

• Broadband, high frequency micro-strip hybrid assemblies
• Low distortion attenuator circuits
• Switch circuits requiring high isolation and fast switching speed

RF Diode Procurement Notes

Verify the specific part number against the manufacturer's current datasheet to ensure compliance with RoHS directives and confirm availability of the Cermachip package style. Check for any updates regarding mounting temperature limits or die attachment procedures before procurement.

RF Diode Selection Notes

Select this component when a hermetically sealed silicon PIN diode with a 500 V reverse voltage rating is required. Consider the 0.30 Ω series resistance and 0.70 pF capacitance for high-frequency performance. Ensure the application can accommodate the 27 x 27 mil chip size and utilizes appropriate wire bonding techniques for the Ti-Pt-Au metallization.

RF Diode Part Context

The MA4P506-131 belongs to MACOM's comprehensive line of silicon PIN/NIP diode chips designed for control circuit applications. It is part of the Cermachip family, which offers high breakdown voltages up to 3,000 V and robust packaging for military and commercial use. This specific model provides a balance of low capacitance and moderate series resistance for RF power control.

RF Diode Replacement Considerations

MA4P505-131: Offers similar characteristics but with lower series resistance (0.45 Ω vs 0.30 Ω) and lower capacitance (0.35 pF vs 0.70 pF). MA4P504-132: Features a higher reverse voltage rating (500 V) but different physical dimensions and thermal properties.