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MA4P7001F-1072T is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE PIN 100V 10W. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MA4P7001F-1072T
- Description：RF DIODE PIN 100V 10W
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：100V
- Current - Max：-
- Capacitance @ Vr, F：-
- Resistance @ If, F：900mOhm @ 100mA, 100MHz
- Power Dissipation (Max)：10 W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Package / Case：2-SMD
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MA4P7001F-1072T
RF Diode Overview
The MA4P7001F-1072T is a high-power silicon PIN diode from the MACOM MA4P MELF series, designed for switch and attenuator applications. It features a fully passivated chip with low leakage current and full face bonding for low thermal resistance. The device operates within a junction temperature range of -55°C to +175°C. Key electrical specifications include a maximum reverse voltage (VR) of 100 VDC, a maximum total capacitance (CT) of 0.7 pF at 100 V, and a maximum series resistance (RS) of 0.9 Ω at 100 mA forward current. Power dissipation is rated at 10 W with a thermal resistance (θJC) of 15°C/W under infinite heatsink conditions.
RF Diode Feature Summary
- High power handling capability suitable for RF switching and attenuation
- Low loss and low distortion performance due to thick I-region design
- Passivated chip construction ensures extremely low reverse bias leakage current
- Full face chip bonding provides symmetrical thermal paths and low thermal resistance
RF Diode Applications
- Low distortion attenuators
- Surface mount switches
- Cellular radio antenna switches
RF Diode Procurement Notes
Verify the specific ordering suffix 'F' corresponds to the MELF surface mount package style when sourcing. Confirm that the '1072T' designation indicates tape and reel packaging quantities as specified in the manufacturer's ordering information. Ensure compliance with RoHS requirements if applicable to the assembly process.
RF Diode Selection Notes
Select this component for designs requiring high power handling up to 1 kW CW in switch and attenuator applications. The 100 V reverse voltage rating defines its operational limits compared to higher voltage variants in the MA4P family. Consider the 0.7 pF capacitance and 0.9 Ω series resistance for impedance matching and insertion loss calculations in the target frequency band.
RF Diode Part Context
This part belongs to the MACOM MA4P MELF & HIPAX Series of high power PIN diodes. It shares the same electrical characteristics as the axial leaded MA4P7001B-401 variant but utilizes the rectangular SMQ MELF package (Case 1072). This package is designed for high volume tape and reel assembly using standard reflow processes.
RF Diode Replacement Considerations
MA4P7001B-401T
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