MA4ST1241CK-1146T

Overview

The MA4ST1241CK-1146T is a dual common cathode hyperabrupt silicon tuning varactor diode manufactured by MACOM Technology Solutions. It is housed in the SC-70 (CASE 1146) surface mount package with three terminals. The device features ion-implanted UHCVD technology for superior capacitance versus voltage repeatability. Key electrical parameters include a nominal diode capacitance of 7.1 pF and a maximum repetitive peak reverse voltage of 12 V. It is designed for low tuning voltage applications, offering high capacitance ratios at low voltages.

Feature Summary

• Dual common cathode configuration within a compact surface mount package
• Hyperabrupt silicon construction utilizing UHCVD/ion-implanted technology
• Optimized for low series resistance and high capacitance ratio at low tuning voltages

Applications

• Voltage controlled oscillators requiring precise frequency tuning
• Phase locked loops demanding high C vs V repeatability
• RF tunable filters and matching networks

Procurement Notes

Verify the specific suffix 'CK' against official MACOM documentation to confirm lead-free status and RoHS compliance, as standard '1146T' variants are typically compliant while 'CK' may indicate specific packaging or material variations. Confirm the manufacturer source, as TE Connectivity acquired M/A-COM's discrete component business; ensure the datasheet aligns with the current corporate entity holding the rights to this part number.

Selection Notes

Select this component when a dual common cathode topology is required to save board space compared to single varactors. The 7.1 pF nominal capacitance suits S-band and similar RF frequencies. Ensure the circuit design operates within the 12 V maximum reverse voltage limit. Verify that the SC-70 package thermal and mechanical constraints meet the target application requirements.

Part Context

This part belongs to the MA4ST1200 series of hyperabrupt varactor diodes. The series is characterized by its use of ultra-high vacuum chemical vapor deposition (UHCVD) and ion implantation processes. These manufacturing techniques are specifically employed to achieve tight tolerances and high repeatability in capacitance-voltage characteristics, which is critical for consistent performance in mass-produced RF circuits.

Replacement Considerations

Check for equivalents within the MA4ST12XX family, such as the MA4ST1240CK-1146T, noting differences in specific capacitance values. Verify if the single-element MA4ST1241-1146T can be configured externally to mimic the dual common cathode behavior if pinout compatibility allows.