MA4X74600L

Diode Arrays Overview

The MA4X746 is a silicon epitaxial planar Schottky Barrier Diode designed for super high-speed switching and small current rectification. It contains two isolated elements in one package to allow high-density mounting. The device achieves an average forward current of 200 mA and a reverse voltage rating below 50 V. Key electrical parameters include a maximum reverse voltage of 50 V, a peak forward current of 300 mA per diode, and a junction temperature limit of 125 °C. The component features a short reverse recovery time of 3.0 ns and low forward voltage characteristics.

Diode Arrays Feature Summary

• Contains two isolated Schottky barrier diodes within a single package for high-density mounting
• Optimized for high-frequency rectification due to extremely short reverse recovery time
• Provides low forward voltage drop and good rectification efficiency
• Utilizes silicon epitaxial planar technology for reliable super high-speed switching

Diode Arrays Applications

• High-frequency rectification circuits
• Super high-speed switching applications
• Small current rectification tasks
• General electronic equipment requiring compact diode solutions

Diode Arrays Procurement Notes

Verify the specific package type and marking symbol against the official datasheet before procurement. Confirm that the application environment remains within the specified absolute maximum ratings, particularly regarding junction temperature and surge currents. Ensure compliance with RoHS directives if required by your manufacturing standards. Check for any updates on maintenance or discontinuation status directly from the manufacturer's official channels prior to finalizing orders.

Diode Arrays Selection Notes

Select this component when circuit design requires dual isolated diodes in a minimal footprint. It is suitable for applications demanding fast switching speeds and low forward voltage drops at moderate current levels. Consider the thermal management requirements given the 125 °C junction temperature limit. Ensure the operating reverse voltage does not exceed the 50 V rating under all transient conditions.

Diode Arrays Part Context

This part belongs to the category of Schottky Barrier Diodes manufactured by Panasonic Electronic Components. It is specifically engineered as a silicon epitaxial planar type for super high-speed switching. The device serves as a solution for small current rectification where speed and size are critical constraints in the electronic design.

Diode Arrays Replacement Considerations

Consult the manufacturer's official documentation for confirmed substitute part numbers. Verify that any replacement maintains equivalent reverse voltage, forward current, and reverse recovery time specifications. Ensure the physical package dimensions and pinout configuration match the existing board layout to avoid redesign efforts.