MADL-011011-01340W

RF Diode Overview

The MADL-011011-01340W is a silicon PIN limiter diode from the MA4L, MADL & MADP Series. It features an ODS-134 chip outline with dimensions of 0.381 mm by 0.178 mm. The device operates within a frequency range of 10 MHz to 18 GHz and has a maximum junction temperature of +175°C. Electrical specifications include a breakdown voltage (VB) of 30 V minimum and 50 V maximum, a junction capacitance (CJ) of 0.21 pF typical at 10 V reverse bias, and a series resistance (RS) of 1.50 Ohms nominal at 500 MHz. The carrier lifetime is 15 ns, the I-region thickness is 3 µm (3 mils), and the contact diameter is 1.2 mils.

RF Diode Feature Summary

• Designed for high signal applications providing low insertion loss and fast signal response times.
• Utilizes Au doped silicon die to achieve lower recovery time characteristics.
• Constructed with proven reliable silicon nitride passivation technology.

RF Diode Applications

• Passive limiter control circuits
• Protection of sensitive receiver components such as low noise amplifiers (LNA)
• Protection of detectors and mixers

RF Diode Procurement Notes

Verify the specific package suffix against the manufacturer's current ordering guide, as availability varies between waffle packs, gel packs, and tape and reel formats. Confirm RoHS compliance status and lead times directly with authorized distributors or MACOM sales representatives prior to finalizing procurement plans.

RF Diode Selection Notes

Select this component when designing passive limiters for frequencies up to 18 GHz requiring fast recovery speeds. The Au doped variant is optimal for minimizing recovery time compared to non-Au doped alternatives. Ensure the circuit design accommodates the specified 1.5 Ohm series resistance and 0.21 pF junction capacitance for proper impedance matching.

RF Diode Part Context

This part belongs to the MACOM MA4L, MADL, and MADP series of silicon PIN limiter diodes. These devices are engineered with small and medium I-region lengths specifically for high signal handling. The series offers various P1dB compression powers and is available in discrete die or assembled surface mount packages.

RF Diode Replacement Considerations

Direct substitutes within the same series include MADL-011010-01340W and MADL-011054-01340W. Verify electrical parameters such as breakdown voltage and capacitance before substitution, as these values differ across the product family.

RF Diode FAQ

What is the physical size of the MADL-011011-01340W die?

The die utilizes the ODS-134 outline with dimensions of 0.381 mm by 0.178 mm.

How does the Au doping affect the device performance?

The Au doped construction is specifically designed to provide lower carrier lifetime and faster signal recovery times compared to non-Au doped devices.

What is the maximum operating junction temperature?

The absolute maximum rating for the junction temperature is +175°C.