MADP-011104-TR0500

RF Diode Overview

The MADP-011104 is a high-power shunt PIN diode designed for switch and attenuator applications from 50 MHz to 5 GHz. It operates within an ambient temperature range of -40°C to +85°C with a junction temperature limit of +175°C. The device handles up to 350 W CW incident power at 3 GHz under cold switching conditions. Key electrical specifications include 0.15 dB typical insertion loss, 29 dB isolation, and 21 dB return loss at 3 GHz. It features a forward voltage of 0.91 V at +100 mA and a reverse leakage current of 6 nA at -800 V. The component is housed in a lead-free 3 mm 12-lead QFN package.

RF Diode Feature Summary

• High power handling capability suitable for demanding RF environments
• Low insertion loss and high isolation performance across the operating band
• Compact surface-mount design optimized for HF through S-band integration

RF Diode Applications

• RF switching circuits requiring high linearity
• Variable attenuator modules
• HF through S-band signal processing systems

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantities. Confirm that the requested variant matches the required tape and reel specifications for automated assembly processes. Cross-reference the part number with the latest datasheet revision to validate all electrical parameters and mechanical dimensions before finalizing procurement orders.

RF Diode Selection Notes

Select this component when high CW power handling and low loss are critical requirements for frequencies between 50 MHz and 5 GHz. Ensure the application supports cold switching operations as recommended by the manufacturer. Verify that the PCB layout accommodates the exposed paddle ground connection for optimal thermal and RF performance. Consider the 12-lead QFN footprint during the initial schematic capture phase.

RF Diode Part Context

This component belongs to MACOM's portfolio of high-performance analog integrated circuits and photonics solutions. It is specifically engineered to meet the size, power, and signal integrity demands of modern communication networks. The device serves as a robust building block for high-density RF front-end designs requiring reliable switching and attenuation capabilities.

RF Diode Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Do not assume functional equivalence with other PIN diodes without reviewing specific electrical and mechanical parameter comparisons.