MADS-001339-12790T

RF Diode Overview

The MADS-001339-12790T is a silicon medium barrier Schottky diode from the MA4E1339 series, manufactured by MACOM Technology Solutions. It is housed in an SC-79 surface mount plastic package and features lead-free construction. The device is rated for a maximum reverse voltage of 20V and a forward current of 30 mA, with a power dissipation capacity of 250 mW. Designed as a zero bias detector diode, it serves as a high-performance component optimized for RF applications.

RF Diode Feature Summary

• Utilizes a silicon medium barrier Schottky junction structure
• Engineered for zero bias detection operations
• Constructed in a low-cost surface mount plastic package

RF Diode Applications

• RF mixer circuits
• Signal detector circuits
• Limiter circuits

RF Diode Procurement Notes

Verify the specific datasheet version to confirm electrical characteristics and mechanical dimensions. Ensure the SC-79 package footprint matches the design layout. Confirm lead-free compliance requirements against project specifications before finalizing procurement orders.

RF Diode Selection Notes

Select this component when a silicon medium barrier Schottky diode is required for RF signal processing. It is suitable for designs needing a 20V reverse voltage rating and compact surface mount integration. Consider its suitability for mixer, detector, and limiter topologies within the target frequency range.

RF Diode Part Context

This part belongs to the MA4E1339 series of silicon medium barrier Schottky diodes. These devices are designed for use in mixer, detector, and limiter circuits. The series offers a balance of performance and cost-effectiveness for RF applications requiring reliable switching and detection capabilities.

RF Diode Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Do not assume cross-compatibility with other Schottky diode families without verifying pinout, electrical ratings, and package dimensions.