MAT01AHZ

Overview

The MAT01AHZ is a matched monolithic dual NPN transistor manufactured by Analog Devices Inc. It utilizes an exclusive silicon nitride triple passivation process to ensure stability of critical parameters over temperature and time. The device features a typical offset voltage (VOS) of 40 µV with a maximum of 100 µV at 25°C, and a low temperature drift of 0.15 µV/°C. It offers high current gain (hFE) with a minimum of 500 at IC = 10 µA, extending up to 840 at IC = 10 mA. The component operates within a collector-emitter voltage range of 45 V and supports a continuous collector current of 25 mA. It is housed in a 6-pin metal header package (H-06) and functions reliably across a temperature range of -55°C to +125°C.

Feature Summary

• Monolithic dual NPN structure with silicon nitride triple passivation for enhanced parameter stability.
• Ultra-low offset voltage matching with minimal temperature drift characteristics.
• High DC current gain maintained across a wide six-decade collector current range.
• Low low-frequency noise voltage suitable for precision signal processing.

Applications

• Weigh scales
• Low noise op amp front ends
• Current mirror and current sink/source circuits
• Low noise instrumentation amplifiers
• Log amplifiers

Procurement Notes

Verify the specific ordering suffix 'Z' indicates RoHS compliance when sourcing this component. Confirm the package option H-06 matches the required mechanical footprint for the design. Ensure that the absolute maximum ratings, particularly regarding reverse bias voltages on emitter-base junctions, are respected during circuit operation to prevent degradation of hFE matching characteristics.

Selection Notes

Select the MAT01AHZ when ultra-low offset voltage and high current gain matching are critical requirements. This component is preferred over standard discrete transistors for applications demanding precise differential performance. Consider the thermal management capabilities if operating near the maximum power dissipation limits, as linearity may require derating at higher case temperatures.

Part Context

The MAT01 series represents a family of matched monolithic dual transistors designed for high-precision analog applications. The AH variant specifically targets low offset voltage requirements compared to the GH variant. These devices are integral to maintaining accuracy in instrumentation systems where mismatch errors would otherwise degrade signal integrity.

Replacement Considerations

Direct substitutes include other parts from the MAT01 family such as the MAT01GHZ for less stringent offset requirements. Verify pin compatibility and package dimensions before substituting with non-matched discrete transistor pairs, as electrical matching characteristics will differ significantly.

FAQ

What is the maximum allowable reverse bias voltage for the emitter-base junction?

The maximum emitter-to-base voltage (BVEBO) is rated at 5 V. Applying reverse bias voltages exceeding this rating can result in the degradation of hFE and hFE matching characteristics.

How does the substrate connection affect leakage currents?

Connecting the substrate (package) to a potential lower than either collector voltage can reduce collector-to-base (ICBO) and collector-to-emitter (ICES) leakage currents by a factor of 2 to 10 times.

What is the typical low-frequency noise voltage specification?

The typical low-frequency noise voltage is 0.23 µV p-p measured from 0.1 Hz to 10 Hz.