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The MAT01GH is a matched monolithic dual NPN transistor from Analog Devices, utilizing an exclusive silicon nitride triple passivation process for stability. It features a maximum offset voltage of 0.5 mV at 25°C and a minimum current gain (hFE) of 77 at IC = 10 µA. The device operates within a temperature range of -55°C to +125°C and provides high breakdown voltage of 45 V. Key electrical characteristics include low noise voltage density of 7.0 nV/√Hz at 10 Hz and excellent hFE linearity across a six-decade collector current range.
Verify the specific ordering suffix when purchasing. The 'Z' suffix indicates RoHS compliance, while the absence denotes standard compliance. Confirm the package option H-06 matches the design requirements. Ensure the selected variant meets the required offset voltage and temperature specifications for the intended application environment.
Select the MAT01GH when a maximum offset voltage of 0.5 mV is acceptable, offering a cost-effective alternative to the MAT01AH which specifies 0.1 mV. Both variants share identical electrical limits and package options. Consider the MAT01GH for applications where moderate matching precision is sufficient, reducing component costs without compromising basic circuit functionality.
The MAT01 series consists of matched monolithic dual transistors designed for high-precision analog applications. The MAT01GH represents the lower precision tier compared to the MAT01AH, sharing the same physical construction and manufacturing process. This family is engineered for stability over time and temperature, making it suitable for critical signal processing tasks requiring minimal drift.
Direct replacements include other MAT01 variants such as MAT01AH or MAT01GHZ, provided the offset voltage and matching specifications align with the circuit requirements. Verify that the replacement part maintains the same H-06 package dimensions and pinout configuration to ensure mechanical compatibility.