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The MAT03EHZ is a dual PNP bipolar junction transistor array manufactured by Analog Devices Inc. It utilizes a TO-78-6 metal can package for through-hole mounting. The device features a maximum collector current of 20mA and a collector-emitter breakdown voltage of 36V. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 500mW. The transition frequency is specified at 190MHz, with a typical saturation voltage of 100mV at 100µA base current and 1mA collector current.
Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Confirm lot traceability and original packaging integrity upon receipt. Cross-reference datasheet revisions to ensure compatibility with existing design specifications before integration into production systems.
Select this component when a matched pair of PNP transistors in a hermetically sealed metal package is required. Consider the TO-78-6 form factor for legacy board layouts. Evaluate thermal management requirements given the 500mW power dissipation limit and through-hole mounting constraints in high-density designs.
This part belongs to the MAT03 series of dual PNP transistor arrays from Analog Devices Inc. It serves as a discrete semiconductor solution for applications requiring matched transistor characteristics. The TO-78-6 package provides robust mechanical protection and consistent thermal performance compared to plastic alternatives.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps if considering alternative dual PNP arrays from other manufacturers.