MAX2601ESA+T

Overview

The MAX2601ESA+T is a silicon bipolar RF power transistor designed for portable cellular and wireless equipment. It delivers 1W of output power at 900MHz from a 3.6V supply with 58% collector efficiency in constant-envelope applications. The device operates within a DC-to-microwave frequency range, featuring a maximum collector-emitter voltage (VCES) of 17V and a continuous power dissipation of 6.4W. It utilizes an 8-pin SOIC package with a thermal slug for enhanced heat dissipation and supports an extended operating temperature range from -40°C to +85°C.

Feature Summary

• Operates directly from single Li-Ion or three NiCd/NiMH battery cells without requiring negative bias voltages or drain switches.
• Utilizes low-cost silicon bipolar technology that eliminates the need for complex voltage inverters and sequencing circuitry found in GaAsFET designs.
• Features a thermally enhanced 8-pin SO package with a backside slug soldered directly to the ground plane for optimal thermal performance.

Applications

• Narrow-Band PCS (NPCS)
• 915MHz ISM Transmitters
• Microcellular GSM (Power Class 5)
• AMPS Cellular Phones

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm the exact package variant and temperature rating. Ensure the component matches the required RoHS compliance status for your assembly process. Cross-reference the datasheet revision history to validate any changes in pin configurations or electrical characteristics prior to final procurement decisions.

Selection Notes

Select this component for high-efficiency power amplification in portable devices powered by standard battery chemistries. The silicon bipolar construction simplifies system design by removing the requirement for negative bias supplies or specialized switching circuits. Consider the thermal management requirements associated with the 6.4W power dissipation capability when designing the printed circuit board layout.

Part Context

This part belongs to the MAX2601/MAX2602 series of RF power transistors optimized for 900MHz applications. While the MAX2602 includes an integrated biasing diode for thermal tracking, the MAX2601 is the standalone transistor version. Both share identical core electrical specifications and packaging, differing only in the presence of the internal bias network in the MAX2602 variant.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.