MBC13900NT1

Overview

The MBC13900NT1 is an NPN silicon low noise transistor fabricated using a 15 GHz fT bipolar IC process. It is housed in the 4-lead SC-70 (SOT-343) surface mount plastic package, resulting in parasitic effect reduction and RF performance enhancements. The device features a maximum collector-emitter voltage of 6.5 Vdc, continuous collector current of 20 mA, and power dissipation of 188 mW at 75°C case temperature. It operates within a temperature range of -40°C to 85°C. Key electrical characteristics include a minimum noise figure of 0.8 dB at 0.9 GHz with 2.0 V and 5.0 mA bias, and a maximum stable gain of 22 dB under the same conditions.

Feature Summary

• High-performance RF transistor utilizing a 15 GHz transition frequency bipolar process for enhanced signal integrity.
• Ultra-small SOT-343 surface mount package designed to minimize parasitic effects and optimize high-frequency operation.
• Lead-free construction compliant with environmental standards, suitable for portable wireless systems requiring low power consumption.

Applications

• Front-end applications in portable wireless systems such as pagers
• Low noise amplifier circuits for cellular phones
• Low noise amplifier circuits for cordless phones

Procurement Notes

Verify the specific ordering suffix NT1 to confirm lead-free compliance and RoHS status. Ensure the procurement channel sources from authorized distributors to guarantee authenticity. Check the datasheet revision history for any updates to electrical specifications or thermal characteristics before finalizing component selection for production.

Selection Notes

Select this component when designing front-end stages for portable wireless devices requiring low noise figures and high gain at frequencies around 900 MHz and 1.9 GHz. Consider the SOT-343 package constraints for PCB layout and thermal management. Evaluate the trade-off between noise figure and gain stability based on the specific biasing requirements of the application circuit.

Part Context

The MBC13900 series represents a family of NPN silicon low noise transistors developed by Freescale Semiconductor. The MBC13900NT1 variant specifically denotes the lead-free version of the standard MBC13900T1 device. Both variants share identical electrical performance and packaging dimensions, differing only in their material composition and environmental compliance certifications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact the manufacturer for compatible alternatives that match the SOT-343 package and 15 GHz fT specification.

FAQ

What is the difference between MBC13900T1 and MBC13900NT1?

The MBC13900NT1 is the lead-free version of the MBC13900T1. Both devices have identical electrical specifications and packaging, but the NT1 variant complies with RoHS standards.

What is the typical minimum noise figure at 0.9 GHz?

The typical minimum noise figure is 0.8 dB when biased at VCE = 2.0 V and IC = 5.0 mA at a frequency of 0.9 GHz.

What is the maximum stable gain at 0.9 GHz?

The maximum stable gain is typically 22 dB when biased at VCE = 2.0 V and IC = 5.0 mA at a frequency of 0.9 GHz.