MBD701G

RF Diode Overview

The onsemi MBD701G is a single Schottky barrier rectifier diode designed for high-frequency applications. It features a peak repetitive reverse voltage (Vrrm) of 70 V and a maximum average forward current (If) of 10 mA. The device exhibits a low forward voltage drop (Vf) of 1 V at the rated current and a low reverse leakage current (Ir) of 200 nA. It operates within a junction temperature range of -55°C to +125°C and is housed in a TO-92 package with a power dissipation rating of 280 mW.

RF Diode Feature Summary

• Schottky barrier construction enables fast switching speeds suitable for RF and high-frequency circuits.
• Low forward voltage drop minimizes power loss during conduction.
• Robust thermal performance supports operation across an extended industrial temperature range.

RF Diode Applications

• RF detection and mixing circuits
• High-speed switching applications
• Clamping and protection diodes

RF Diode Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as historical data indicates potential non-compliance for specific manufacturing batches. Ensure the TO-92 package matches design requirements before integration.

RF Diode Selection Notes

Select this component when low capacitance and fast recovery are critical. Compare Vf and Ir specifications against circuit requirements. Verify that the 70 V reverse voltage rating exceeds the peak inverse voltage in the application environment.

RF Diode Part Context

This part belongs to the MBD701 family of small-signal Schottky diodes. It shares electrical characteristics with variants like MMBD701LT1G but differs in packaging, utilizing the through-hole TO-92 form factor instead of surface-mount options.

RF Diode Replacement Considerations

Direct substitutes include other 70 V Schottky diodes in TO-92 packages. Verify pinout compatibility and thermal resistance values. Cross-reference datasheets for equivalent Vf and Ir performance metrics.