Diode Arrays MBR1040CT-BP product image

MBR1040CT-BP

$0.26
  • Description:DIODE ARR SCHOTT 40V 10A TO220AB
  • Series:-

SKU:292d6baddc3f Category: Brand:

  
  • Quantity
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MBR1040CT-BP is listed in the Diode Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is DIODE ARR SCHOTT 40V 10A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR1040CT-BP

  • Description:DIODE ARR SCHOTT 40V 10A TO220AB
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):40 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:-
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 40 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR1040CT-BP

MBR1040CT-BP

Diode Arrays Overview

The MBR1040CT-BP is a Schottky Barrier Rectifier manufactured by Micro Commercial Components (MCC). It features a common cathode configuration with two silicon elements housed in a TO-220AB package. The device supports an average forward current of 10A at a case temperature of 105°C and withstands a maximum repetitive peak reverse voltage of 40V. Key electrical parameters include a maximum DC blocking voltage of 40V, a typical junction capacitance of 170pF measured at 1.0MHz, and a peak forward surge current capability of 125A for an 8.3ms half-sine wave pulse.

Diode Arrays Feature Summary

  • Utilizes majority carrier conduction to achieve low power loss and high efficiency.
  • Features a metal-to-silicon construction designed for high surge capacity.
  • Encapsulated in epoxy resin that meets UL 94 V-0 flammability ratings.

Diode Arrays Applications

  • Low voltage, high frequency inverters
  • Free wheeling applications
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix when sourcing components. The standard -BP designation indicates bulk packaging containing 50 pieces per tube, 1,000 pieces per box, and 5,000 pieces per carton. Confirm compliance requirements such as halogen-free status, which requires adding the -HF suffix to the part number. Ensure procurement from authorized distributors to guarantee genuine parts with full traceability and adherence to MCC quality standards.

Diode Arrays Selection Notes

Select this component for designs requiring robust rectification in low-voltage environments. The TO-220AB package facilitates mounting with a maximum torque of 5 in-lbs and provides a thermal resistance of 2.0°C/W from junction to case. Consider the operating junction temperature range of -55°C to +150°C for thermal management planning. Verify that the 40V rating aligns with the circuit's peak reverse voltage requirements to ensure reliable operation under load.

Diode Arrays Part Context

This device belongs to the MBR1020CT through MBR1060CT series produced by Micro Commercial Components. All members of this family share identical physical dimensions, pin configurations, and thermal characteristics. They differ primarily in their maximum repetitive peak reverse voltage ratings, which range from 20V to 60V across the series lineup while maintaining the same 10A average forward current capability.

Diode Arrays Replacement Considerations

Cross-reference with other manufacturers offering 10A, 40V Schottky rectifiers in the TO-220AB package. Verify that substitute devices match the 40V maximum DC blocking voltage and 10A average forward current specifications. Ensure the replacement maintains compatible thermal resistance and junction temperature limits for direct integration into existing layouts.

Diode Arrays FAQ

What is the thermal resistance of the MBR1040CT-BP?

The thermal resistance from junction to case is specified as 2.0°C/W.

How is the internal structure configured?

The device utilizes a common cathode configuration containing two independent silicon elements within a single package.

What is the maximum non-repetitive peak forward surge current?

The device can withstand a peak forward surge current of 125A for an 8.3ms half-sine wave pulse.

MBR1040CT-BPMBR1040CT-BP
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