Diode Arrays MBR10H100CT product image

MBR10H100CT

$0.75
  • Description:DIODE ARRAY SCHOT 100V 5A TO-220
  • Series:SWITCHMODE™

SKU:e8dd9d80b833 Category: Brand:

  
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MBR10H100CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SCHOT 100V 5A TO-220. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR10H100CT

  • Description:DIODE ARRAY SCHOT 100V 5A TO-220
  • Series:SWITCHMODE™
  • Mfr:onsemi
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:730 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3.5 µA @ 100 V
  • Operating Temperature - Junction:175°C (Max)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR10H100CT

MBR10H100CT

Diode Arrays Overview

The MBR10H100CT is a silicon Schottky barrier rectifier manufactured by onsemi. It features a dual anode common cathode configuration housed in a TO-220-3 package. The device supports a maximum average forward current of 10 A and a repetitive peak reverse voltage of 100 V. Key electrical characteristics include a maximum forward voltage of 950 mV, a non-repetitive peak forward surge current of 120 A, and a maximum reverse leakage current of 5 uA. It operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

  • Utilizes metal-silicon junction technology for majority carrier conduction, ensuring low power loss and high efficiency.
  • Incorporates guardring design for overvoltage protection to enhance device reliability under stress conditions.
  • Provides high surge current capability suitable for demanding switching applications.

Diode Arrays Applications

  • Low voltage, high frequency inverters
  • Free wheeling diodes in DC-DC converters
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the manufacturer origin carefully, as the part number MBR10H100CT is also assigned to Taiwan Semiconductor products with identical specifications. Confirm that the specific unit received matches the required onsemi datasheet parameters, particularly regarding the TO-220-3 package dimensions and marking codes, to ensure compatibility with your bill of materials.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for 100 V applications. The TO-220-3 through-hole package facilitates heat dissipation for 10 A continuous currents. Ensure the circuit design accounts for the 950 mV forward voltage drop at rated current to manage thermal performance effectively.

Diode Arrays Part Context

This device belongs to the MBR10H series of high-voltage Schottky rectifiers from onsemi. It shares functional similarities with other members like the MBRB20H100CTT4G but differs in packaging and current rating. The series is designed for general-purpose rectification where low forward voltage and fast switching are critical.

Diode Arrays Replacement Considerations

Cross-reference with MBR10H100CT from Taiwan Semiconductor for pin-compatible alternatives. Verify that substitute parts meet the same 10 A, 100 V, and TO-220-3 requirements before integration.

MBR10H100CTMBR10H100CT
$0.75
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