Diode Arrays MBR120100CTR product image

MBR120100CTR

$48.80
  • Description:DIODE MOD SCHOT 100V 120A 2TOWER
  • Series:-

SKU:5647c14d000c Category: Brand:

  
  • Quantity
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MBR120100CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 100V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR120100CTR

  • Description:DIODE MOD SCHOT 100V 120A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):120A (DC)
  • Voltage - Forward (Vf) (Max) @ If:840 mV @ 60 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 20 V
  • Operating Temperature - Junction:-
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR120100CTR

MBR120100CTR

Diode Arrays Overview

The GeneSiC MBR120100CTR is a silicon power Schottky rectifier module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 100 V and an average forward current rating of 120 A per package. The device supports a peak forward surge current of 800 A per leg. Maximum instantaneous forward voltage is 0.84 V at Tj = 150 °C, with a thermal resistance of 0.80 °C/W per leg. Operating temperature ranges from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability for robust transient handling
  • Electrically isolated Twin Tower package design
  • Not ESD sensitive construction

Diode Arrays Applications

  • Power conversion systems
  • DC-DC converters
  • Freewheeling applications in high-frequency circuits

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official GeneSiC documentation to confirm lead configuration details, as datasheets indicate 'R' devices have reversed leads. Ensure the procurement specification matches the required 100 V blocking voltage and 120 A current rating. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing orders.

Diode Arrays Selection Notes

Select this component for applications requiring high current density and low forward voltage drop in a compact form factor. The Twin Tower package facilitates efficient heat dissipation via the base plate. Consider the 0.80 °C/W junction-to-case thermal resistance for heatsink sizing calculations. Verify that the 100 V rating accommodates system voltage spikes without exceeding the DC blocking limit.

Diode Arrays Part Context

This part belongs to the MBR120 series of silicon Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 45 V to 100 V reverse voltage. The Twin Tower package is designed for screw mounting, providing electrical isolation between the terminal and the base plate for direct heatsink attachment.

Diode Arrays Replacement Considerations

Direct replacements within the same series include MBR12080CT or MBR12060CT if lower voltage ratings are acceptable. Verify pinout compatibility, particularly regarding lead orientation, as 'R' suffixes denote reversed leads. Cross-reference thermal resistance values to ensure equivalent cooling performance.

MBR120100CTRMBR120100CTR
$48.80
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