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MBR200150CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 150V 100A 2TOWER. Review the specifications below when checking this part for your BOM.
The MBR200150CT is a silicon power Schottky diode module featuring a twin tower package configuration. It provides an average forward current of 200 A per package and supports repetitive peak reverse voltages ranging from 150 V to 200 V. The device operates within a junction temperature range of -55 °C to +150 °C, with a maximum thermal resistance of 0.45 °C/W per leg.
Verify the specific voltage rating suffix (e.g., 150V vs 200V) as the series spans multiple options. Confirm terminal orientation requirements, noting that devices with an 'R' suffix feature reversed leads compared to standard configurations. Ensure compatibility with screw mount installation methods specified for this package type.
Select based on required blocking voltage within the 150 V to 200 V range and the 200 A continuous current capacity. Consider the 0.45 °C/W thermal resistance for heatsink design. Verify lead orientation needs, as the standard and 'R' variants have different pin configurations. Ensure the operating environment stays within the -55 °C to +150 °C junction temperature limits.
This component belongs to the MBR200150CT through MBR200200CTR series of silicon power Schottky diodes. Manufactured by GeneSiC Semiconductor, these modules utilize a twin tower package to deliver high current performance in a compact form factor suitable for demanding power conversion environments.
Cross-reference with other models in the MBR200 series for compatible current and voltage ratings. Verify mechanical footprint and terminal alignment, particularly if substituting with an 'R' variant which has reversed leads. Ensure thermal management solutions match the 0.45 °C/W junction-to-case resistance specification.
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