Diode Arrays MBR20030CTR product image

MBR20030CTR

$63.89
  • Description:DIODE MOD SCHOTT 30V 200A 2TOWER
  • Series:-

SKU:f66a6883bf03 Category: Brand:

  
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MBR20030CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR20030CTR

  • Description:DIODE MOD SCHOTT 30V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):200A (DC)
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR20030CTR

MBR20030CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR20030CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 30 V and an average forward current rating of 200 A per package. The device exhibits a maximum forward voltage of 0.70 V and a junction-to-case thermal resistance of 0.45 °C/W per leg. It supports an operating temperature range from -55 °C to 150 °C and offers a peak forward surge current capability of 1500 A.

Diode Arrays Feature Summary

  • High surge current capability for robust performance under transient conditions
  • Twin Tower package design optimized for efficient thermal dissipation
  • Low forward voltage drop to minimize conduction losses
  • Not sensitive to electrostatic discharge

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation, as variations may exist between CT and CTR configurations. Confirm that the required voltage and current ratings align with the system's operational limits. Ensure proper mounting torque specifications are followed during installation to maintain thermal interface integrity. Check for RoHS compliance status if environmental regulations apply to the final assembly.

Diode Arrays Selection Notes

Select this component when a low forward voltage drop and high surge capability are required in a compact form factor. The Twin Tower package facilitates effective heat transfer to the heatsink. Consider the 30 V reverse voltage rating to ensure adequate margin above the maximum circuit operating voltage. Evaluate the thermal resistance characteristics to determine appropriate cooling solutions for the intended duty cycle.

Diode Arrays Part Context

This component belongs to the MBR200 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings ranging from 20 V to 40 V. All models share similar current ratings and package dimensions, allowing for flexible design integration based on specific voltage requirements.

Diode Arrays Replacement Considerations

Compatible substitutes within the same series include MBR20020CT, MBR20035CT, and MBR20040CT. Verify that the alternative part's reverse voltage rating meets or exceeds the application's maximum requirement. Ensure the physical package dimensions and terminal configuration match the existing board layout.

MBR20030CTRMBR20030CTR
$63.89
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