Diode Arrays MBR20035CTR product image

MBR20035CTR

$63.89
  • Description:DIODE MOD SCHOTT 35V 200A 2TOWER
  • Series:-

SKU:0d5718e9ba87 Category: Brand:

  
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MBR20035CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR20035CTR

  • Description:DIODE MOD SCHOTT 35V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):200A (DC)
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 20 V
  • Operating Temperature - Junction:-
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR20035CTR

MBR20035CTR

Diode Arrays Overview

The MBR20035CTR is a silicon power Schottky diode module from the GeneSiC Semiconductor MBR200 series. It features a Twin Tower package with screw mounting and provides an average forward current of 200 A per package. The device has a repetitive peak reverse voltage of 35 V, a maximum forward voltage of 0.70 V per leg, and a thermal resistance of 0.45 °C/W per leg. It supports a junction temperature range of -55°C to +150°C and offers a peak forward surge current of 1500 A.

Diode Arrays Feature Summary

  • High surge capability for handling transient currents
  • Twin Tower package design for efficient thermal management
  • Not ESD sensitive for simplified handling

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm electrical ratings and pinout configuration. Ensure the procurement channel provides valid traceability and authenticity guarantees for power semiconductor modules. Check for any specific storage or handling requirements indicated in the datasheet before ordering.

Diode Arrays Selection Notes

Select this component when a 35 V reverse voltage rating and 200 A continuous current capacity are required. The Twin Tower package is suitable for applications needing robust mechanical mounting and low thermal resistance. Consider the 0.70 V forward voltage drop for efficiency calculations in low-voltage, high-current circuits.

Diode Arrays Part Context

This module belongs to the MBR200 series of silicon power Schottky diodes. The series includes variants with reverse voltages ranging from 20 V to 40 V. All models share similar physical dimensions and thermal characteristics, differing primarily in their blocking voltage specifications.

Diode Arrays Replacement Considerations

Direct replacements within the same series include MBR20020CTR and MBR20040CTR, provided the system voltage allows for the respective lower or higher reverse voltage ratings. Verify that the substitute part maintains the same Twin Tower package and terminal configuration.

MBR20035CTRMBR20035CTR
$63.89
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