Diode Arrays MBR20080CT product image

MBR20080CT

$63.89
  • Description:DIODE MOD SCHOTT 80V 200A 2TOWER
  • Series:-

SKU:55a53fc91e42 Category: Brand:

  
  • Quantity
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MBR20080CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR20080CT

  • Description:DIODE MOD SCHOTT 80V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):200A (DC)
  • Voltage - Forward (Vf) (Max) @ If:840 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 20 V
  • Operating Temperature - Junction:-
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR20080CT

MBR20080CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR20080CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 80 V and an average forward current of 200 A per package. It features a twin tower package design with screw mounting capabilities. The device supports a junction temperature range from -55 °C to +150 °C and offers high surge capability with a peak forward surge current of 1500 A per leg at 8.3 ms. Thermal resistance from junction to case is specified at 0.45 °C/W per leg.

Diode Arrays Feature Summary

  • Twin tower package configuration designed for robust mechanical stability
  • High surge current handling capability for transient protection
  • Non-ESD sensitive construction for simplified assembly

Diode Arrays Applications

  • DC-DC converter circuits
  • Free-wheeling rectification in motor drives
  • Power supply output stages

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation, as variants may feature reversed leads or different packaging configurations. Confirm RoHS compliance status through manufacturer declarations prior to integration. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values to maintain safe operating temperatures under load conditions.

Diode Arrays Selection Notes

Select this component when applications require high current density in a compact twin tower form factor. The 80 V rating suits low-voltage DC conversion systems. Evaluate thermal performance based on the 0.45 °C/W junction-to-case resistance. Consider the 1500 A surge rating for systems experiencing significant inrush currents during startup or fault conditions.

Diode Arrays Part Context

This module belongs to the MBR200 series, which spans voltage ratings from 45 V to 100 V while maintaining a consistent 200 A average forward current rating. The series utilizes silicon technology optimized for fast recovery characteristics typical of Schottky rectifiers. The twin tower package allows for efficient heat dissipation and straightforward PCB integration in industrial power electronics.

Diode Arrays Replacement Considerations

Cross-reference with other MBR200 series variants such as MBR20060CT or MBR200100CT if voltage requirements differ. Verify pinout compatibility, particularly regarding lead orientation for 'R' suffix devices. Ensure replacement modules match the twin tower package dimensions and thermal specifications.

MBR20080CTMBR20080CT
$63.89
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