MBR20100CT-E3/4W

Diode Arrays Overview

The MBR20100CT-E3/4W is a dual common-cathode high voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a TO-220AB package with matte tin-plated leads and meets UL 94 V-0 flammability standards for its molding compound. The device provides a maximum average forward rectified current of 20 A per diode at a case temperature of 133 °C, with a peak repetitive reverse voltage of 100 V. It supports a peak forward surge current of 150 A and operates within a junction temperature range of -65 to +150 °C.

Diode Arrays Feature Summary

• Trench MOS Schottky technology designed to reduce power losses and increase efficiency
• Guard ring structure incorporated for enhanced ruggedness and long-term reliability
• Low forward voltage drop characteristics optimized for high-frequency operation
• High forward surge capability suitable for demanding switching applications

Diode Arrays Applications

• High frequency rectification in switching mode power supplies
• Freewheeling diodes in DC/DC converter circuits
• Polarity protection in electronic systems

Diode Arrays Procurement Notes

Verify the specific ordering suffix matches the required packaging format. The /4W designation indicates tube delivery with a base quantity of 50 units per tube. Confirm compliance requirements such as RoHS status and lead finish specifications against project needs before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for space-constrained designs. The TO-220AB package facilitates through-hole mounting and efficient heat dissipation via the isolated tab. Ensure thermal management strategies account for the specified thermal resistance values under expected operating loads.

Diode Arrays Part Context

This part belongs to the MBR20xxxCT-E3 family of high voltage Schottky rectifiers from Vishay. The series utilizes Trench MOS technology to achieve superior performance compared to standard barrier devices. Variants within the family offer different voltage ratings while maintaining consistent current handling capabilities and package footprints.

Diode Arrays Replacement Considerations

Direct replacements include other Vishay parts within the same datasheet family, such as the MBR2090CT-E3/4W for lower voltage requirements. Cross-manufacturer equivalents must be evaluated based on matching pin configurations, thermal characteristics, and electrical limits.

Diode Arrays FAQ

What is the maximum junction temperature rating?

The maximum operating junction and storage temperature range is -65 to +150 °C.

How is the device configured internally?

The MBR20100CT-E3/4W contains two independent Schottky diodes arranged in a common cathode configuration.

What is the typical thermal resistance from junction to case?

The typical thermal resistance (RθJC) per diode is 2.0 °C/W for the TO-220AB package.