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MBR2060PT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOTT 60V 20A TO247AD. Review the specifications below when checking this part for your BOM.
The MBR2060PT is a Schottky barrier rectifier manufactured by Taiwan Semiconductor. It features a dual common cathode configuration housed in a TO-247-3 package for through-hole mounting. The device utilizes silicon technology to provide high efficiency and low power loss. Key electrical ratings include a maximum average forward rectified current of 20 A and a maximum repetitive peak reverse voltage of 60 V. The component supports a peak forward surge current of 200 A and operates within a junction temperature range of -65 °C to +150 °C.
Verify the specific suffix 'PT' against the manufacturer's latest datasheet to confirm packaging details, as standard variants may differ. Ensure the ordering code matches the required RoHS compliance and halogen-free status defined in the official documentation. Cross-reference the TO-247-3 pinout with your PCB footprint design to prevent installation errors during assembly.
Select this component when a dual common cathode topology is required for 20 A applications. The TO-247-3 package offers superior thermal dissipation compared to smaller packages like TO-220AB. Consider the 60 V rating relative to your circuit's peak inverse voltage requirements. Evaluate the forward voltage characteristics against system efficiency targets compared to standard PN junction rectifiers.
This part belongs to the MBR20xx series of Schottky barrier rectifiers from Taiwan Semiconductor. The series is designed for general-purpose high-efficiency rectification. The PT suffix typically denotes tube packaging, distinguishing it from tape-and-reel variants. It serves as a direct replacement for similar 20 A, 60 V dual Schottky devices in existing designs requiring improved thermal handling.
The maximum operating junction temperature is +150 °C.
Yes, the device incorporates a guardring structure for overvoltage protection.
The peak forward surge current is 200 A for an 8.3 ms single half-sine wave.
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