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MBR2550CTH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOTT 50V 25A TO220AB. Review the specifications below when checking this part for your BOM.
The MBR2550CTH is a dual common-cathode Schottky barrier rectifier from the Taiwan Semiconductor MBR2535CT series. It features a TO-220AB package with an average forward current rating of 25 A and a repetitive peak reverse voltage of 50 V. The device supports a surge peak forward current of 200 A and operates within a junction temperature range of -55 to +150 °C. Electrical specifications include a maximum reverse current of 200 µA at 25°C and a typical junction-to-case thermal resistance of 1 °C/W.
Verify that the specific part number includes the 'H' suffix, which denotes AEC-Q101 qualification. Confirm the package type is TO-220AB and check for RoHS compliance and halogen-free status according to IEC 61249-2-21 standards. Ensure the ordering code matches the required voltage rating within the MBR25xCT series.
Select this component for applications requiring a 50 V reverse voltage rating and 25 A continuous forward current in a through-hole TO-220AB package. Consider the low forward voltage drop for improved efficiency in low-voltage, high-frequency switching circuits. Verify thermal management requirements against the specified junction-to-case thermal resistance.
This device belongs to the MBR2535CT–MBR25150CT series of 25 Ampere Schottky Barrier Rectifiers manufactured by Taiwan Semiconductor. The series utilizes metal-silicon junction technology with epitaxial construction and oxide passivation. The 'H' suffix specifically indicates that the unit meets AEC-Q101 qualification standards for automotive applications.
Cross-reference with other MBR2550CT variants from different manufacturers ensuring identical TO-220AB packaging and electrical ratings. Verify if AEC-Q101 qualification is mandatory for the target application before substituting non-H suffix parts.
The 'H' suffix signifies that the device is AEC-Q101 qualified.
The maximum operating junction temperature is +150 °C.
Yes, it incorporates a guard ring structure designed for overvoltage protection.
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