Diode Arrays MBR400150CTR product image

MBR400150CTR

$70.04
  • Description:DIODE MOD SCHOT 150V 200A 2TOWER
  • Series:-

SKU:e186f24e4392 Category: Brand:

  
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MBR400150CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 150V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR400150CTR

  • Description:DIODE MOD SCHOT 150V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 150 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR400150CTR

MBR400150CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR400150CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 150 V and an average forward current rating of 400 A per package. The device operates within a junction temperature range of -55 °C to +150 °C. Electrical characteristics include a maximum forward voltage of 0.88 V at 200 A and a thermal resistance from junction to case of 0.35 °C/W per leg. The 'R' suffix indicates reversed leads compared to the standard configuration.

Diode Arrays Feature Summary

  • High surge capability for robust performance under transient conditions
  • Twin Tower package design for efficient mounting and heat dissipation
  • Not ESD sensitive, simplifying handling procedures

Diode Arrays Applications

  • High-current DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific lead configuration required for your application, as the CTR suffix denotes reversed leads relative to the standard CT variant. Confirm that the 150 V reverse voltage rating aligns with your circuit's peak inverse voltage requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance to maintain operation within the -55 °C to +150 °C range.

Diode Arrays Selection Notes

Select this component when high average current capacity and low forward voltage drop are critical for efficiency. The Twin Tower package facilitates screw mounting on heatsinks. Consider the reversed lead orientation if using existing footprints designed for the non-R version. Evaluate thermal constraints based on the 0.35 °C/W junction-to-case resistance to ensure reliable operation at full load.

Diode Arrays Part Context

This module belongs to the MBR400 series of silicon power Schottky diodes, which offers various voltage ratings from 150 V to 200 V. The series is characterized by high surge capability and fast switching speeds suitable for high-frequency applications. The Twin Tower packaging allows for compact integration into high-power density systems requiring robust mechanical stability.

Diode Arrays Replacement Considerations

MBR400150CT serves as the direct functional equivalent with standard lead orientation. Verify pin compatibility before substitution due to the reversed lead configuration of the CTR variant.

MBR400150CTRMBR400150CTR
$70.04
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