MBR4050PT

Diode Arrays Overview

The MBR4050PT is a silicon Schottky rectifier manufactured by onsemi, housed in a TO-247-3 through-hole package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 50 V and a forward current rating of 40 A. The device exhibits a typical forward voltage of 770 mV and supports a forward surge current of 330 A. Operating within a temperature range of -65 °C to +150 °C, it incorporates guard-ring technology for stress protection.

Diode Arrays Feature Summary

• Dual Anode Common Cathode Configuration
• Guard-Ring Technology for Stress Protection
• High Surge Current Capacity

Diode Arrays Applications

• Power Supply Output Rectification
• Power Management Systems
• Free Wheeling Diodes

Diode Arrays Procurement Notes

Verify the manufacturer designation carefully, as the MBR4050PT part number has been historically associated with Taiwan Semiconductor and General Electric. Confirm that the specific unit supplied is sourced from or qualified by onsemi to ensure compliance with their manufacturing standards and datasheet specifications. Cross-reference the ordering suffix and component marking against official onsemi documentation to avoid substitution errors.

Diode Arrays Selection Notes

Select this component for applications requiring high-efficiency rectification with low forward voltage drop. The TO-247 package provides robust thermal performance suitable for high-current environments. Ensure the circuit design accommodates the 50 V reverse voltage limit and utilizes the dual anode structure if common cathode topology is required for synchronous or bridge configurations.

Diode Arrays Part Context

This device belongs to the MBR40 series of Schottky barrier rectifiers, which are designed for general-purpose power conversion. The series offers various voltage ratings ranging from 35 V to 60 V while maintaining a consistent 40 A current capability. These components are engineered to replace traditional p-n junction rectifiers in applications where speed and efficiency are critical.

Diode Arrays Replacement Considerations

MBR4050CT

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

Does the MBR4050PT include internal protection features?

Yes, the device includes a guard-ring structure at the periphery of the wafer to provide stress protection during operation.

What is the package lead configuration?

It uses a TO-247-3 package with a Dual Anode Common Cathode configuration.