Diode Arrays MBR40H60PT-E3/45 product image

MBR40H60PT-E3/45

$1.04
  • Description:DIODE ARR SCHOTT 60V 40A TO247AD
  • Series:-

SKU:73cdf12293bd Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MBR40H60PT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 60V 40A TO247AD. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR40H60PT-E3/45

  • Description:DIODE ARR SCHOTT 60V 40A TO247AD
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):40A
  • Voltage - Forward (Vf) (Max) @ If:830 mV @ 40 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 µA @ 60 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-247AD (TO-3P)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR40H60PT-E3/45

MBR40H60PT-E3/45

Diode Arrays Overview

The MBR40H60PT-E3/45 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes high barrier technology to enhance performance at elevated temperatures. The device features a TO-247AD 3L package and provides a maximum repetitive peak reverse voltage of 60 V with an average forward rectified current rating of 40 A per diode. Key electrical characteristics include a peak forward surge current of 400 A, a maximum instantaneous forward voltage of 0.83 V at 40 A and 25 °C, and a thermal resistance from junction to case of 1.2 °C/W per diode.

Diode Arrays Feature Summary

  • High barrier technology designed for improved high temperature performance
  • Guardring structure incorporated for overvoltage protection
  • Low forward voltage drop contributing to lower power losses and high efficiency
  • Capable of high frequency operation and high forward surge capability

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC/DC converters
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets RoHS compliance and halogen-free requirements as specified for the base part number. Ensure the package code matches the required delivery mode and unit weight specifications provided in the manufacturer's ordering information section.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for low voltage applications. The TO-247AD 3L package supports high current ratings up to 40 A. Verify that the operating junction temperature range of -65 to +175 °C aligns with the thermal management design of the target circuit.

Diode Arrays Part Context

This component belongs to the MBR40HxxPT series, which includes variants with different reverse voltage ratings such as 35 V, 45 V, and 50 V. All members of this family share identical mechanical dimensions, thermal characteristics, and current ratings, differing only in their maximum repetitive peak reverse voltage capabilities.

Diode Arrays Replacement Considerations

MBR40H45PT-M3/P

Diode Arrays FAQ

What is the maximum junction temperature for the MBR40H60PT?

The maximum operating junction temperature is +175 °C.

How is the device configured internally?

The device is configured as a dual common cathode arrangement.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case is 1.2 °C/W per diode.

MBR40H60PT-E3/45MBR40H60PT-E3/45
$1.04
Buy Now