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MBR40H60PT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 60V 40A TO247AD. Review the specifications below when checking this part for your BOM.
The MBR40H60PT-E3/45 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes high barrier technology to enhance performance at elevated temperatures. The device features a TO-247AD 3L package and provides a maximum repetitive peak reverse voltage of 60 V with an average forward rectified current rating of 40 A per diode. Key electrical characteristics include a peak forward surge current of 400 A, a maximum instantaneous forward voltage of 0.83 V at 40 A and 25 °C, and a thermal resistance from junction to case of 1.2 °C/W per diode.
Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets RoHS compliance and halogen-free requirements as specified for the base part number. Ensure the package code matches the required delivery mode and unit weight specifications provided in the manufacturer's ordering information section.
Select this component when a dual common cathode configuration is required for low voltage applications. The TO-247AD 3L package supports high current ratings up to 40 A. Verify that the operating junction temperature range of -65 to +175 °C aligns with the thermal management design of the target circuit.
This component belongs to the MBR40HxxPT series, which includes variants with different reverse voltage ratings such as 35 V, 45 V, and 50 V. All members of this family share identical mechanical dimensions, thermal characteristics, and current ratings, differing only in their maximum repetitive peak reverse voltage capabilities.
MBR40H45PT-M3/P
The maximum operating junction temperature is +175 °C.
The device is configured as a dual common cathode arrangement.
The thermal resistance from junction to case is 1.2 °C/W per diode.
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