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MBR500200CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 250A 2TOWER. Review the specifications below when checking this part for your BOM.
The MBR500200CT is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a twin tower package with screw mount installation. The device supports a repetitive peak reverse voltage of 200 V and an average forward current of 500 A per package. Key electrical parameters include a maximum forward voltage of 0.92 V at 500 A and a thermal resistance of 0.30 °C/W per leg. Operating temperatures range from -55 °C to +150 °C.
Verify the specific suffix designation against official documentation to confirm terminal configuration details. Confirm RoHS compliance status through manufacturer datasheets prior to integration. Ensure procurement channels are authorized to guarantee component authenticity and traceability throughout the supply chain.
Select this module for applications requiring high current handling and low forward voltage drop. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure system operating voltages remain within the rated DC blocking limits to maintain reliability.
This component belongs to the MBR500 series of silicon power Schottky diodes. The series includes variants ranging from 150 V to 200 V reverse voltage ratings. All models share similar mechanical dimensions and thermal characteristics, differing primarily in their voltage blocking capabilities.
MBR500150CTR
The thermal resistance from junction to case is 0.30 °C/W per leg.
Devices with the 'R' suffix have reversed leads compared to standard configurations.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.