Diode Arrays MBR500200CTR product image

MBR500200CTR

$61.55
  • Description:DIODE MOD SCHOT 200V 250A 2TOWER
  • Series:-

SKU:55f88d9348f9 Category: Brand:

  
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MBR500200CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 250A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR500200CTR

  • Description:DIODE MOD SCHOT 200V 250A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):250A
  • Voltage - Forward (Vf) (Max) @ If:920 mV @ 250 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR500200CTR

MBR500200CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR500200CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage (VRRM) of 200 V and an average forward current (IF(AV)) of 500 A per package. The device operates within a junction temperature range of -55 °C to +150 °C. Key electrical characteristics include a maximum forward voltage of 0.92 V at Tj = 150 °C and a thermal resistance (junction-case) of 0.30 °C/W per leg. The module supports a peak forward surge current of 3500 A.

Diode Arrays Feature Summary

  • High surge capability for robust performance under transient conditions
  • Twin Tower package design for efficient mounting and heat dissipation
  • Not ESD sensitive, simplifying handling procedures

Diode Arrays Applications

  • Industrial motor drives
  • DC-DC converters
  • Power supply units

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation to confirm terminal configuration details, as datasheets indicate variations in lead orientation between CT and CTR variants. Confirm RoHS compliance status through manufacturer declarations. Ensure the procurement channel is authorized to guarantee component authenticity and traceability for high-current applications.

Diode Arrays Selection Notes

Select this module when a 200 V rating and 500 A continuous current capacity are required in a Twin Tower form factor. Consider the 0.30 °C/W thermal resistance for heatsink sizing calculations. Evaluate the 0.92 V forward voltage drop at elevated temperatures for efficiency analysis. Compare against lower voltage siblings like the MBR500150CT if system voltage permits.

Diode Arrays Part Context

This component belongs to the MBR500 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series includes variants ranging from 150 V to 200 V reverse voltage ratings. All models share the same Twin Tower package and 500 A current rating, differing primarily in their blocking voltage specifications and terminal configurations.

Diode Arrays Replacement Considerations

The MBR500150CTR is a compatible alternative with a 150 V rating, provided the circuit voltage does not exceed this limit. Verify that the lower voltage rating of the substitute does not compromise safety margins in the application.

MBR500200CTRMBR500200CTR
$61.55
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