MBR50035CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR50035CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 35 V and an average forward current of 500 A per package. It features a Twin Tower package with screw mount installation. The device operates within a junction temperature range of -55 °C to +150 °C, offering high surge capability and low thermal resistance.

Diode Arrays Feature Summary

• High surge current capability
• Twin Tower package design
• Not ESD sensitive

Diode Arrays Applications

• DC-DC converters
• Free-wheeling rectification in motor drives
• Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific suffix (CT vs CTR) against the datasheet to confirm lead configuration, as reversed leads affect mounting orientation. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Ensure the ordering part number matches the exact voltage rating required for the application circuit.

Diode Arrays Selection Notes

Select this component when a 35 V blocking voltage and 500 A continuous current are required in a Twin Tower form factor. Evaluate the thermal resistance of 0.30 °C/W per leg to ensure adequate heatsinking. Consider the non-ESD sensitive nature during handling and assembly processes to prevent potential damage.

Diode Arrays Part Context

This module belongs to the MBR500 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series covers voltage ratings from 20 V to 40 V, sharing common mechanical dimensions and thermal characteristics across variants like the MBR50020CT and MBR50040CT.

Diode Arrays Replacement Considerations

Direct replacements include MBR50020CT and MBR50040CT from the same series, provided the voltage ratings align with the system requirements. Verify that substitute modules maintain the same Twin Tower package and terminal configuration for mechanical compatibility.