Diode Arrays MBR60030CTR product image

MBR60030CTR

$91.69
  • Description:DIODE MOD SCHOTT 30V 300A 2TOWER
  • Series:-

SKU:634b6a2903c6 Category: Brand:

  
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MBR60030CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR60030CTR

  • Description:DIODE MOD SCHOTT 30V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR60030CTR

MBR60030CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR60030CTR is a silicon power Schottky rectifier module featuring a twin tower package. It contains one pair of common anode diodes rated for a repetitive peak reverse voltage of 30 V and an average forward current of 600 A per leg. The device exhibits a maximum forward voltage of 0.75 V at 300 A and supports a peak forward surge current of 4000 A. Thermal resistance from junction to case is 0.28 °C/W per leg, with an operating temperature range spanning -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability designed for robust power applications
  • Twin tower package configuration for efficient mounting
  • Not sensitive to electrostatic discharge

Diode Arrays Applications

  • Power conversion systems
  • DC-DC converters
  • Inverter circuits

Diode Arrays Procurement Notes

Verify the specific part number against official datasheets to confirm electrical ratings and pinout compatibility. Ensure thermal management solutions align with the specified junction-to-case thermal resistance. Confirm that the twin tower package dimensions match the intended mechanical assembly requirements before finalizing procurement decisions.

Diode Arrays Selection Notes

Select this component when high current handling and low forward voltage drop are required in a compact form factor. The twin tower package facilitates direct mounting to heatsinks. Consider the 30 V reverse voltage rating and 600 A continuous current capacity to ensure adequate margins for the target application's electrical stress conditions.

Diode Arrays Part Context

This device belongs to the MBR600 series of silicon power Schottky rectifiers from GeneSiC Semiconductor. The series offers various voltage ratings ranging from 20 V to 40 V while maintaining consistent current capabilities. The twin tower package design is standard across this family, providing a reliable solution for high-power density applications requiring efficient heat dissipation.

Diode Arrays Replacement Considerations

Compatible substitutes within the same series include MBR60020CTR and MBR60040CTR, which share identical package dimensions and thermal characteristics but differ in reverse voltage ratings.

MBR60030CTRMBR60030CTR
$91.69
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